N25Q032A13EV741 Allicdata Electronics
Allicdata Part #:

N25Q032A13EV741-ND

Manufacturer Part#:

N25Q032A13EV741

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M SPI 108MHZ
More Detail: FLASH - NOR Memory IC 32Mb (8M x 4) SPI 108MHz
DataSheet: N25Q032A13EV741 datasheetN25Q032A13EV741 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Description

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N25Q032A13EV741 is one of memory products from N25Q series of memory products developed by Numonyx(now owned by Micron). It is a standard flash memory which is used for storing data with fast read/write speeds. The N25Q032A13EV741 has a capacity of 32Mbits and can be used in a variety of applications in consumer electronics, automotive, and industrial applications.

The N25Q032A13EV741 is a Non-volatile Memory (NVM). It stores data without power and it retains the data stored once power is removed. Non-volatile memory products are highly reliable, cost-effective, and have fast access times compared to other memory types such as DRAM. NVM products also have a low power consumption and are resistant to radiation, making them suitable for a wide range of applications.

The N25Q032A13EV741 has a wide range of applications in consumer electronics, automotive, and industrial products. It is used for storage and boot code, program and data storage, parameter configuration, real-time clock, sensor readings, and other embedded applications. In automotive applications, the N25Q032A13EV741 is used in the Infotainment system and in the ECU (Electronic Control Unit). In industrial applications, it is used to store programmable logic controllers (PLCs) programs and data in harsh environments.

The working principle of the N25Q032A13EV741 is as follows. The N25Q032A13EV741 is built around a metal oxide semiconductor (MOS) memory array design. Inside the MOS memory array, the memory is organized into blocks called “pages”. Pages are further organized into “segments”, which are logical groupings of memory that the device can read and write to on a single command. To read or write data to the N25Q032A13EV741, the user must send a command that specifies the address of the page or segment as well as a data write or read command.

The N25Q032A13EV741 has an erase cycle time of up to 500,000 cycles and an access time of 5ns or less. The N25Q032A13EV741 also supports advanced low power modes, including deep power down, no active acceleration, power-on reset, and software reset. This allows the device to maintain its data while consuming minimal power.

The N25Q032A13EV741 also has a built-in error correction code (ECC) and an internal register, allowing the device to be used with a microcontroller. This makes the device highly reliable and ensures that data is handled reliably. With its wide range of features, the N25Q032A13EV741 is a reliable, cost-effective, and high-performance memory product suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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