N25Q128A13ESEC0F TR Allicdata Electronics

N25Q128A13ESEC0F TR Integrated Circuits (ICs)

Allicdata Part #:

N25Q128A13ESEC0FTR-ND

Manufacturer Part#:

N25Q128A13ESEC0F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 8SO
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz ...
DataSheet: N25Q128A13ESEC0F TR datasheetN25Q128A13ESEC0F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP2
Base Part Number: N25Q128A13
Description

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N25Q128A13ESEC0F TR Application Field and Working Principle

Memory is an indispensable part of computers, which has a profound influence on the performance and storage of data. The N25Q128A13ESEC0F is a type of memory. It is an integrated circuit with a non-volatile flash memory that stores and retrieves data even if there is no power in the system. Its application field and working principle are introduced in this article.

Application Field

N25Q128A13ESEC0F is a type of flash memory, which is widely used for the storage and retrieval of digital information. Owing to its fast speed of data access, it is most commonly used in digital cameras, digital video cameras, netbooks, laptops, and other digital devices.

Another application field is embedded systems. N25Q128A13ESEC0F can be embedded in automobiles, security sensors, and smart cards. It can provide the system with fast, non-volatile storage with a high degree of reliability. Furthermore,it is also applicable in computing products like high-constrained data storage in smartphones, video game consoles, and other applications.

Working Principle

The integrated circuit N25Q128A13ESEC0F TR has been designed with the NAND flash memory structure, which is utilized in a lot of embedded systems. The power-down protection feature incorporated in this type of memory reduces current consumption, allowing the memory to enter a low power-state when not in use. Its fast access feature makes it suitable for a wide range of digital devices.

N25Q128A13ESEC0F TR has a high endurance variable-page size architecture, wherein the memory size can be adjusted for better performance. It is non-volatile, meaning the stored data remains intact even if the power is disconnected from the system. Furthermore, it offers an endurance rating and a good lifespan for its long-term data retention.

Conclusion

N25Q128A13ESEC0F TR is a memory integrated circuit suitable for multiple applications. Its working principle is based on the NAND flash memory structure, wherein it is designed with a power-down protection feature to yield low current consumption and faster access of data. Furthermore, its high endurance variable page size architecture allows for better memory size adjustment. All of these features make it suitable for a wide range of digital devices as well as embedded systems.

The specific data is subject to PDF, and the above content is for reference

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