N25Q064A13ESF42F TR Allicdata Electronics
Allicdata Part #:

N25Q064A13ESF42FTR-ND

Manufacturer Part#:

N25Q064A13ESF42F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M SPI 108MHZ 16SO W
More Detail: FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 1...
DataSheet: N25Q064A13ESF42F TR datasheetN25Q064A13ESF42F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO W
Base Part Number: N25Q064A13
Description

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N25Q064A13ESF42F TR is a memory device from Micron. It belongs to a family known as NOR Flash. NOR Flash is a type of non-volatile memory used for code and data storage in a variety of applications. It is a type of electrically erasable programmable read-only memory (EEPROM), and it is typically used in embedded systems. It is widely used as it provides fast read access and low power consumption.

N25Q064A13ESF42F TR is a 64 Mbit (8MB) device that operates with a supply voltage ranging from 1.7 V to 3.6 V at a temperature range of -40°C to + 85°C. It offers an access time of 40 ns and supports up to 8-bit multiple I/O transfer, including XIP.

N25Q064A13ESF42F TR is used in a variety of embedded systems, including automotive, industrial, medical, consumer, and more. It is typically used for code and data storage. It supports up to 8-bit multiple I/O transfer, allowing faster read/write operations. In addition, N25Q064A13ESF42F TR comes with several security features such as secure erase and write protection. These features offer superior protection and reliability for code and data storage.

The working principle of N25Q064A13ESF42F TR is based on EEPROM that can be electrically erased and reprogrammed. It works by storing charge on an insulated gate. When a voltage is applied to the gate, electrons are injected or withdrawn from the channel, creating an electric field. This electric field causes charge to be stored on the gate and eventually results in a change of the threshold voltage.

N25Q064A13ESF42F TR is a reliable, high-speed and low-power memory device from Micron. Its wide range of applications and security features make it one of the most popular memory solutions for embedded systems. Its working principle based on EEPROM allows fast and efficient storage of code and data.

The specific data is subject to PDF, and the above content is for reference

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