N25Q032A13ESEH0F TR

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N25Q032A13ESEH0F is an embedded non-volatile memory, which belongs to the QSPI NOR Flash Memory family. It is designed to provide a smaller form factor, faster programming and performance. The memory is designed to operate in extreme temperatures, up to 105℃, and its powerful endurance characteristics make it particularly adaptable to a wide range of applications.

N25Q032A13ESEH0F can store 32Mbits of data, which is divided into 4 megabit of data plus 8 megabit of spare blocks for data programming and rewriting. Both on-chip Fast Mode (FM) and Standard Mode (SM) are supported. The memory features high endurance, which allows up to 200K erase and 10K programs, and is rated for 1 million rewrite cycles. The chip also has an erase page size of 8K bytes and a 32 byte block spanning the entire byte array.

The chip supports both Single- mode and multiplexed mode operation. Single mode refers to a single clock edge representing a single data bit whereas multiplexed mode refers to two clock edges, where each edge represents two data bits. Single-mode operation provides higher performance with lower power consumption while multiplexed mode offers larger transfer rates with slightly higher power consumption.

N25Q032A13ESEH0F has wide applications in a variety of fields such as consumer electronics, automotive, industrial, networking/telecommunication, military and aerospace. The applications range from product code storage, image storage, boot code storage, reference data storage, network control storage, memory map storage and additional usage like software and system configuration. Additionally, the memory can be used in fields such as industrial control systems, data loggers, factory automation, etc.

The working principle of N25Q032A13ESEH0F is built on non-volatile memory cell technology. The memory cell used is a CMOS transistor with a tunnel oxide layer and a floating gate. To program the memory cell, a voltage is applied across the tunnel oxide layer to break down the layer, trapping the electrical charge on the floating gate electrode. This charge is then stored and can remain stored for years. To read the memory cell, the voltage is applied to the tunnel oxide layer, which then control the transistor\'s conductivity. Depending on the charge stored on the floating gate, the transistor will either be conducting or non-conducting.

In sum, N25Q032A13ESEH0F provides an ideal memory solution to satisfy needs in extreme environments. Its wide application and working principle make it an ideal solution for different industries. Its improved performance and power consumption characteristics are making the memory the chip of choice of the modern age.

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