N25Q032A11ESE40G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (8M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package:	8-SO W
Base Part Number:	N25Q032

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Introduction

N25Q032A11ESE40G is a type of non-volatile memory or NVM, which offers a reliable and durable way of storing information. It is a triple-level cell, or TLC, device with a capacity of 32 Gbits. N25Q032A11ESE40G is a highly versatile NVM memory that can be used in a wide range of applications, making it a popular choice in the electronics industry.

Application Field

N25Q032A11ESE40G is used in many industries and applications, such as mobile phones and computers, network storage systems, industrial automation, medical devices, and vehicles. N25Q032A11ESE40G is a cost-effective solution for applications that require non-volatile memory, such as industrial systems and network storage systems. It is also used in automotive applications where reliability and high performance are essential.N25Q032A11ESE40G is also suitable for applications requiring long-term storage, such as data archiving and backup. The device is an ideal choice for low-power embedded systems, where power consumption is a major consideration. It has high data retention performance, making it ideal for applications that require long-term storage.

Working Principle

N25Q032A11ESE40G is an advanced non-volatile memory technology that uses a novel principle for data retention. The device uses a technique called \'charge trap flash\', or CTF, which stores data bits within microscopic traps. This technology enables the memory device to store large amounts of data at very low power consumption.The N25Q032A11ESE40G uses the CTF technology to store three different voltage levels into each cell. This creates a total of three states of data, which allows it to store much more information than conventional memory technologies. The three states of each cell depend on the voltage levels that it is being subjected to. The read and write operations of N25Q032A11ESE40G are governed by a flash controller. The controller is responsible for controlling the flow of data between the memory device and the application. It is also responsible for managing the programming of data in the memory device, as well as for maintaining the data integrity.To read and write data to the N25Q032A11ESE40G, the controller uses various read and write protocols. These protocols are designed to ensure that the device is able to store and retrieve data quickly and reliably. The controller also ensures that the data stored in the device is secure and protected.

Conclusion

N25Q032A11ESE40G is a versatile non-volatile memory device that offers a reliable and durable solution for applications that require long-term data storage. It utilizes a novel principle called \'charge trap flash\' to store and retrieve information quickly and reliably. Its low power consumption, high data retention performance, and reliable operation make it a popular choice in the electronics industry.

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