N25Q128A31EF740F TR Allicdata Electronics
Allicdata Part #:

N25Q128A31EF740FTR-ND

Manufacturer Part#:

N25Q128A31EF740F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ QFN
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz
DataSheet: N25Q128A31EF740F TR datasheetN25Q128A31EF740F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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N25Q128A31EF740F TR is a Non-Volatile Memory (NVM) device which can be used to store data for long periods of time, even without power. It integrates advanced features such as high speed, large data capacity and voltage support, making it ideal for use in a wide range of applications.

The N25Q128A31EF740F TR is often used in a variety of memory applications, such as embedded systems, automotive applications and industrial control systems. It is suitable for storing program code and critical user data in applications such as automotive, medical and industrial control. Its wide voltage range makes it suitable for use in a variety of applications, including high-performance embedded systems, industrial and consumer applications.

The device features a low-power standby mode, making it suitable for battery-powered applications. It also features a wide temperature range, making it suitable for use in extreme environmental conditions. The device is reliable and can endure voltage overshoots, spikes and ESD, to ensure data integrity.

The working principle of the N25Q128A31EF740F TR is based on the Non-Volatile Metal Oxide Semiconductor (NMOS) technology, which allows data to be stored without the need for a constant power supply. The device is divided into 8 layers of interconnected memory blocks, which can store up to 16Mbit of data. Each memory block can be programmed individually, allowing for fast and efficient data storage and retrieval. The device is also ECC-capable, so it can detect bit errors and correct them.

The N25Q128A31EF740F TR is also equipped with an array of safety functions designed to protect the memory and prevent loss of data. One such feature is rogue bit detection, which can detect and correct errors caused by voltage transients or other external sources, thus preventing loss or corruption of data. The device also includes read and write protect features, which can protect against inadvertent memory content changes.

The N25Q128A31EF740F TR is an excellent choice for a variety of memory applications due to its low power consumption, small size and large data capacity. It has a wide range of applications and is suitable for use in any application where reliable data storage and retrieval are required. Its advanced features make it an ideal choice for embedded systems, automotive and industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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