N25Q064A13ESF41G

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N25Q064A13ESF41G is a type of non-volatile memory (NVM) produced by Micron Technology. It is a type of flash memory with millions of transistors packed into a single chip, making it a very dense type of memory. It is designed for a wide range of applications including enterprise applications, automotive applications, consumer electronics and industrial control systems.

The N25Q064A13ESF41G is a 3V device that is composed of a monolithic non-volatile memory (NVM). It features Organized 4 Gbit large block memory densities that are organized as 2048 blocks with each block containing 32 Kwords x 64 bits. It is backward compatible to the N25Q512A13ESF41G, making it one of the most advanced 3V NVM products available.

The N25Q064A13ESF41G combines high performance, low power consumption and a wide array of features to provide an optimized solution for various embedded and system-level applications. Combining its reliability and fast access times, the N25Q064A13ESF41G can be used in automotive, consumer and industrial applications.

The N25Q064A13ESF41G employs a floating gate technology and advanced CMOS process to achieve high levels of reliability. The 8M word configuration provides a number of advantages for consumer, automotive and industrial applications as this technology is both durable and energy efficient. It has a set of program/erase protection bits and advanced NVM functions, resulting in very high performance and low power consumption.

The N25Q064A13ESF41G can be used in a variety of consumer, automotive and industrial applications because of its advanced features. It is most commonly used in digital audio players, GPS navigation systems, automotive applications, consumer electronics, industrial control systems and embedded applications. It is also used to store information such as digital maps, images, sound clips, phone numbers and additional program instructions in consumer electronics. In automotive systems, it is used to store data such as digital images, audio, text and program instructions.

In terms of its working principle, the N25Q064A13ESF41G is composed of the following components: a memory array, addressing and control logic, an output register and an internal power supply. The memory array is composed of memory cells and is organized as a two-dimensional array of rows and columns. Each cell holds one bit of memory. The column address is sent to the memory array to locate a cell and the data stored in a cell is then read out onto an output register. Every address is interconnected with a row and a column, allowing the device to search for and read from the cell containing the data. The output register lets the data be transferred to or from the memory array and is connected to an output pin. The internal power supply is used to hold the voltage level in the chip, allowing the device to keep holding information.

In summary, the N25Q064A13ESF41G is a type of non-volatile memory (NVM) produced by Micron Technology. It is a type of flash memory with millions of transistors packed into a single chip, making it a very dense type of memory. It is designed for a wide range of applications including enterprise applications, automotive applications, consumer electronics and industrial control systems. In terms of its working principle, the N25Q064A13ESF41G is composed of a memory array, addressing and control logic, an output register and an internal power supply, making it one of the most advanced 3V NVM products available.

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