N25Q128A11BSF40F TR Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (16M x 8)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP2
Base Part Number:	N25Q128

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Application Field of N25Q128A11BSF40F TR Memory

N25Q128A11BSF40F TR memory is a 3V non-volatile serial flash memory developed by Micron semiconductor. It features a total of 166,040,288 bits of address space, with a maximum of 131,072 full size 72KB multi-I/O page, 16 address bits and 4KB page size. This memory is designed for high performance applications and ideal for applications requiring small form factor, long data retention and long read and write cycles. N25Q128A11BSF40F TR memory is commonly used in video and audio applications, portable gaming devices and medical equipment. The combination of its voltage range, low power consumption and wide notch tolerance makes it suitable for applications in consumer electronics and portable computing devices. It also has significant usage in data communication, industrial automation, automotive, medical and consumer applications.

Working Principle of N25Q128A11BSF40F TR Memory

N25Q128A11BSF40F TR memory contains an array of non-volatile flash memory cells and a control circuit. This type of memory works by storing data in digital form in the memory cells. Each memory cell is capable of storing 1 bit of data. The control circuit is responsible for storing the data in the memory cells, and for reading and writing the data. It works by receiving the digital data from an external source, and then encodes it using an electronic key in order to store the data in the memory cells. Once the data is stored, the control circuit can access the data by decoding it and reading it from the memory cells. The control circuit is also responsible for writing new data to the memory cells. This is done by encoding the new data with the same electronic key, and then writing it to the memory cells. The control circuit can also erase the stored data from the memory cells when required.In summary, N25Q128A11BSF40F TR memory works by storing data in digital form in the memory cells, and using a control circuit to read, write and erase the data from the cells. This type of memory is ideal for use in applications requiring small form factor, low power consumption, long data retention and long read and write cycles.

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