N25Q128A11ESE40F TR Integrated Circuits (ICs)

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N25Q128A11ESE40F TR is a type of memory device with a Flash architecture. It was designed for use in large memory applications and is built with a NAND structure. The N25Q128A11ESE40F TR is a multi-level cell (MLC) NOR Flash memory from NANYA Memory Technology Corporation. This device has a density of 128Mbits and has a 4 KB, 16 KB, and 64KB block erase portion. The N25Q128A11ESE40F TR has a wide range of applications such as consumer electronics, digital cameras, personal digital assistants (PDAs), smart phones, and mobile devices. In addition, this Flash memory is suitable for secure remote applications that require high-speed data transmission.

The N25Q128A11ESE40F TR features an interface with advanced features that enable simultaneous and sustained read/write operation. It can operate across temperature extremes with a 256-bit on-chip memory that provides reliable data protection. The device has an ultra-low power consumption and advanced NANYA flash technology which ensures reliable operation and data protection. Additionally, the N25Q128A11ESE40F TR also has error correction capability that detects and corrects bit errors in data.

N25Q128A11ESE40F TR operates using a unique Flash architecture. It has two components, the electronic system and the Flash program. The electronic system handles the data storage and retrieval operations, while the Flash program handles the data programming and erasure. The Flash portion consists of a layer of small transistors, which write and erase data. The Flash programming is done by applying a specific voltage to the transistors and the data is then stored. The erase voltage is typically higher than the write voltage and thus the data can be erased without writing over it. The Flash program also includes an Error Correction Code (ECC) which is used to detect and correct bit errors in the data.

N25Q128A11ESE40F TR works by using a NAND structure which stores bits in cells consisting of two transistors. The first transistor stores a single bit, while the second transistor holds the same bit but with a higher voltage. This allows for more efficient data storage than is possible with a NOR Flash memory. When it comes to reads, the NAND structure allows for multiple reads in a single read cycle. This means that it can speed up the dataprocessing time and minimize power consumption. Additionally, the NAND structure also provides improved endurance, which is important for applications that must strive to keep their data up-to-date.

The N25Q128A11ESE40F TR is a versatile and reliable Flash memory device with a wide range of applications in both consumer and industrial settings. It offers a reliable storage medium with good power consumption, low voltage operation, and an advanced error correction code for reliable data protection. Furthermore, it provides a multi-level cell NOR Flash architecture with an advanced interface for simultaneous and sustained read/write operations. This makes it suitable for a variety of applications in which high-speed data transformation and secure remote applications are key.

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