N25Q128A11TSF40F TR Allicdata Electronics
Allicdata Part #:

N25Q128A11TSF40FTR-ND

Manufacturer Part#:

N25Q128A11TSF40F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 16SO W
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 108MHz ...
DataSheet: N25Q128A11TSF40F TR datasheetN25Q128A11TSF40F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO W
Base Part Number: N25Q128
Description

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N25Q128A11TSF40F TR is a type of non-volatile memory which has a wide range of applications. This memory offers a low power, high performance solution for a variety of applications. It has ultra-low power consumption and operates at the same voltage level as the other memory types. It also has a unique ability to rapidly store and retrieve data in a very short time.

The N25Q128A11TSF40F TR is a multi-chip package (MCP) consisting of two integrated memory chips. The two memory chips are designed to work together to increase the amount of memory contained in a small package. The MCP also allows the chips to communicate with each other and to manage data more efficiently than with single silicon chips. This allows the N25Q128A11TSF40F TR to offer higher densities and lower power usage than other memory types.

The N25Q128A11TSF40F TR has a read/write speed of up to 68 MB/s making it very suitable for high-speed applications. It is particularly well-suited for use in embedded systems, where fast data access and low-power consumption are critical. It is also a suitable choice for modern ARM processors which require fast access to data. The N25Q128A11TSF40F TR is also attractive for automotive and IoT applications, both of which require long-term data storage.

The N25Q128A11TSF40F TR is capable of providing an extremely fast read and write speeds with an average access time of less than 10ps. The memory is also rated for an endurance of up to 10,000 erase/write cycles. This is accomplished through the use of error correction code (ECC) which can detect and correct errors in the data stored in the memory.

The N25Q128A11TSF40F TR also offers enhanced reliability with a data retention period of up to 10 years. Since the N25Q128A11TSF40F TR is a non-volatile memory device, it can store data even if the power is lost. As an additional safety measure, this memory also has built-in write protection which prevents accidental overwriting of data.

The N25Q128A11TSF40F TR is well-suited for use in a variety of applications where the data needs to be preserved for long periods of time or accessed quickly. From smartphone and tablet applications to embedded systems and automotive applications, this type of memory is becoming increasingly popular. The N25Q128A11TSF40F TR is also well-suited for use in modern ARM processors as well as other IoT devices. Its low-power consumption and high-speed operation make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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