NDD02N60Z-1G

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N-channel Enhancement Mode MOSFETs are used in a various range of applications and are often found in power MOSFETs. The NDD02N60Z-1G is a high-performance transistor designed to provide exceptional performance with a medium on-state resistance. This particular item is rated to handle up to 800 Volts in the drain-source voltage (VDS) range, making it ideal for DC/DC converters, high-power switching and other similar applications where a higher VDS is required.

The NDD02N60Z-1G has a maximum drain current of 2A, a drain-source breakdown voltage of 800V and a maximum power dissipation of 18W. It is also noted for its low gate charge and its ability to switch in a relatively short amount of time, making it perfect for pulse or fast switching applications. The NDD02N60Z-1G also features a built-in body diode that is useful in providing battery back up, inrush current protection and flyback power supply designs.

The NDD02N60Z-1G is designed to be used in applications that require low energy consumption, and its low power loss allows it to provide efficient, reliable power control and switching. The NDD02N60Z-1G is also designed to offer excellent electrical and thermal stability, allowing it to be used in various environments. The NDD02N60Z-1G is also designed to be used in applications where a robust, reliable VDS is required and it is ideal for use in DC/DC converters and high-power switching applications.

The working principle of the NDD02N60Z-1G is based on the same principles as other MOSFETs – a silicon gate oxide layer isolates the silicon from the metal-oxide-semiconductor channel. By applying an electric field, current is allowed to flow between the drain and the source. During the on and off states, the gate controls the flow of current between the source and drain, thus controlling the power delivery of the circuitry or system involved.

The NDD02N60Z-1G also features built-in protection against ESD and other similar events. The built-in diode protects the device from over-current situations, which can occur when the load voltage momentarily falls below the threshold. The diode reduces the drain voltage, thus protecting the NDD02N60Z-1G from surge currents.

The NDD02N60Z-1G is a reliable and powerful transistor, designed to offer exceptional performance in a wide range of applications. Its low internal resistance and built-in diodes make it perfect for DC/DC converters and high-power switching applications where a higher VDS is required. The NDD02N60Z-1G is also known for its low power loss and its ability to switch in a relatively short amount of time, making it ideal for pulse or fast switching applications. The device also features built-in protection against ESD and offers excellent electrical and thermal stability.

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