NDD03N60ZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NDD03N60ZT4GOSTR-ND |
Manufacturer Part#: |
NDD03N60ZT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V DPAK |
More Detail: | N-Channel 600V 2.6A (Tc) 61W (Tc) Surface Mount DP... |
DataSheet: | NDD03N60ZT4G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 312pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 61W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NDD03N60ZT4G is an N-Type channel power MOSFET that is known as an Insulated Gate Field Effect Transistor (IGFET), or simply a MOSFET. This type of semiconductor is used as an electronic switch, meaning it is capable of turning on and off electric current flow through the device. The NDD03N60ZT4G can handle a peak current of 540A with an operating drain-source voltage of 600V.
This MOSFET is suited for a variety of general applications, such as high speed switching, high or low frequency operations, power semiconductor applications and high power applications. This type of device is typically used in applications in the consumer, industrial and automotive industries. Examples of the types of applications where the NDD03N60ZT4 is suitable for including power converters, motor drives, switch mode power supplies, home automation systems, automotive lighting and power control systems.
The NDD03N60ZT4G is constructed in an N-channel, standard gate drive and uses integrated low-resistance features. The device contains the metal oxide semiconductor structure, which is constituted of a substrate of metal oxide between the gate and drain. When the gate voltage is applied and greater than the threshold voltage, the electric field traps mobile charge carriers in the metal oxide, which creates a channel between the gate and the drain, allowing current to flow.
The low-resistance features of the NDD03N60ZT4G allow it to operate at very high-switching speeds and offer very high efficiency due to its low power dissipation. The majority of power dissipation is due to the saturation current of the device. With its high speed operation and low power dissipation, the NDD03N60ZT4G is suitable for applications requiring high switching frequency and high efficiency.
The NDD03N60ZT4G is available in a variety of packages, including TO-220, TO-247, and TO-252. The device is also designed to be very simple to install and operate, making it a cost effective and reliable choice for consumers and industrial applications.
In conclusion, the NDD03N60ZT4G is an ideal choice for a variety of general applications due to its high efficiency, low power dissipation, integrated low-resistance features, and ability to operate at high switching speeds. Its simple installation, cost effective and reliable nature make it an ideal choice for consumers and industrial applications alike.
The specific data is subject to PDF, and the above content is for reference
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