NDD04N50ZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NDD04N50ZT4GOSTR-ND |
Manufacturer Part#: |
NDD04N50ZT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 3A DPAK |
More Detail: | N-Channel 500V 3A (Tc) 61W (Tc) Surface Mount DPAK |
DataSheet: | NDD04N50ZT4G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 308pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 61W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDD04N50ZT4G, like all Single-type FETs and MOSFETs, is a transistor-like device that is used in various electronic circuits and power control systems. It is basically a unipolar or unipolar, field-effect transistor (FET) and is typically used as a small signal switching transistor in various types of circuits to control electron current or voltage by means of an external signal applied to the gate. It is a lateral N-channel MOSFET, which means it features n-type conduction.
Unlike the BJT, a FET works differently. In FETs the current through the gate (or drain) is controlled by the voltage applied to the gate (or source). This means that when a voltage is applied to the gate (or source) of a FET, the resistance between the source and drain decreases, thereby allowing electron current to flow between them. This is how FETs are used for voltage or current control.
The NDD04N50ZT4G is a vertical Single MOSFET, with an integrated body diode for protection. It has an effective gate threshold voltage (E-GV) of 4V, a maximum drain current (ID Max) of 130A, a maximum drain source voltage (VDS Max) of 50V, and a maximum power dissipation (pD) of 740W. It features n-type conduction and is capable of handling up to a maximum junction temperature of 175°C.
The NDD04N50ZT4G is mainly used in various high power switching applications such as in motor control, lighting control, power supplies, and DC-DC converters. It is especially useful in applications where fast switching is desired due to its low gate capacitance. It is also used in various digital logic circuits, such as ring oscillator, D-type flip-flop, and NAND gate. As the NDD04N50ZT4G has a low Rds(on) of 33mΩ at 4.5V, it can be used in high efficiency power applications.
The NDD04N50ZT4G is also useful in high power, high voltage power applications such as power supply regulation, motor control, and lighting control. Due to its low thermal resistance and excellent heat dissipation, it can be used in high power applications for efficient power management.
Overall, the NDD04N50ZT4G is a versatile device with many uses in a variety of different applications. It is capable of handling high voltages and currents, making it suitable for many uses, from low voltage switching applications to high voltage power applications. With its low gate capacitance, fast switching is achievable, and its excellent thermal resistance and heat dissipation makes it suitable for high power applications. It is a reliable and cost-effective device, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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