| Allicdata Part #: | NDD04N60Z-1GOS-ND |
| Manufacturer Part#: |
NDD04N60Z-1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 4A IPAK |
| More Detail: | N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-P... |
| DataSheet: | NDD04N60Z-1G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NDD04N60Z-1G is a MOSFET with a PowerPAK®7 package, constructed with the latest group III-Nitride technology. N-channel MOSFETs are the most common type of FET and are used in a wide range of devices, from telecommunications to solar power systems. NDD04N60Z-1G is a special type of MOSFET, which stands for \'Metal Oxide Semiconductor Field Effect Transistor\'. It is an N-channel MOSFET, meaning it is designed to handle negative currents. NDD04N60Z-1G has a low threshold voltage and fast switching speed, which makes it well suited for high-speed applications like mobile telecommunications, server-class computers, and broadband infrastructure.
MOSFETs are the basic building blocks of integrated circuits, and the NDD04N60Z-1G is no exception. It is a three terminal device, consisting of a drain, a source, and a gate. The drain and source terminals are connected to an N-type silicon substrate, while the gate is connected to a P-type substrate. When a voltage is applied across the gate and drain, a current flows through the device, allowing electrons to pass through the silicon substrate.
The NDD04N60Z-1G is commonly used in switching applications, as it has a low on-state resistance, low gate charge, and high frequency operation. It is well suited for high-power applications such as automotive, inverter, and motor control applications. The device can be used as a voltage regulator, voltage stabilizer, and even a power transistor. It is also used in power amplifiers, power converters, and in RF applications.
The NDD04N60Z-1G also offers many advantages like very high switching speed, high surge current capability, superior avalanche and EMI performance, and low turn-on threshold voltage. Its power efficiency is also better than other MOSFETs, providing more power in less space, which is especially beneficial in consumer electronics and solar applications. Additionally, the N-channel design provides improved immunity to system noise, which makes it well suited for low voltage, high performance, and power-sensitive consumer applications.
In summary, the NDD04N60Z-1G is a high performance single MOSFET that is suitable for a wide variety of applications. It offers fast switching speeds, a low threshold voltage, and high power efficiency, making it ideal for consumer electronics, telecommunications, and solar applications. Its high frequency operation, low on-state resistance, and superior avalanche and EMI capabilities makes it well suited for high-power switching applications. Additionally, its improved immunity to noise makes it a suitable choice for low voltage, high performance, and power-sensitive consumer applications.
The specific data is subject to PDF, and the above content is for reference
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NDD04N60Z-1G Datasheet/PDF