NDD03N80Z-1G

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800V
Current - Continuous Drain (Id) @ 25°C:	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.5 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	440pF @ 25V
FET Feature:	--
Power Dissipation (Max):	96W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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NDD03N80Z-1G Application Field and Working Principle

The NDD03N80Z-1G by ON Semiconductor is a N-Channel Enhancement Mode MOSFET which consists of three terminals named as source, drain and gate. It is built using very advanced technology and uses high-temperature resistant silicon-nitride PASSIVATION material which helps it to increase its reliability, reduce the on-state resistance and it also gives it a low threshold voltage. It is mainly used for the applications where a low on resistance is needed and high breakdown voltage is not required like high-speed switching or other similar applications. The NDD03N80Z-1G is an enhancement-mode MOSFET which means that it has no inherent bipolar current gains (it doesn\'t amplify currents). This is because the channel between the source and drain of the MOSFET is off or quasi-off if the voltage at the gate is less than the source voltage (which depends on the type of MOSFET it is). This means that it is normally OFF and must be turned ON by enough Voltage at the Gate.The NDD03N80Z-1G is supplied in a TO-251-5 package, is an ideal choice for high-valued applications and offers fast switching, low on-state resistance, high-temperature rating, and high surge current capability; making it an industry-leading parts for use in medium to high power applications. The construction of the NDD03N80Z-1G contains of a large number of transistor cells, each having one gate, one source and one drain. The cell includes a P-channel MOSFET connected to the gate and the source, and an N-channel MOSFET connected to the gate and the drain. When the gate voltage is either below the threshold voltage enough to forward-bias the P-channel MOSFET, or above it enough to reverse bias the N-channel MOSFET, both FETS are off so current can\'t flow from the source to the drain. The NDD03N80Z-1G is mainly used in applications where a low on-state resistance is required; for example, it is used as a high-frequency switching device or for motor control, power conversion and motor suppression applications. Additionally, it can also be used in high-power applications like in LED lighting and solar inverter systems. The NDD03N80Z-1G allows very efficient operation. In general, it has a very low gate-drain threshold voltage, enabling safe and clean switching. The FET combined with other technology is often used in amplifier circuits, and compared to other types of transistors, the NDD03N80Z-1G is easier to control. This makes it easier to use in a variety of applications. To summarise, the NDD03N80Z-1G is an advanced technology, high-temperature resistant, low-on-state resistance MOSFET which is used for high-frequency switching, motor controls and high-power applications due to its fast switch rate, high-temperature rating, and high surge current capability. It is an ideal choice for high valued applications.

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