NDD05N50ZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NDD05N50ZT4GOSTR-ND |
Manufacturer Part#: |
NDD05N50ZT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A DPAK |
More Detail: | N-Channel 500V 4.7A (Tc) 83W (Tc) Surface Mount DP... |
DataSheet: | NDD05N50ZT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The NDD05N50ZT4G is a silicon N-channel enhancement-mode power MOSFET transistor, which is a part of the popular ZETEX Series of power MOSFET transistors. This MOSFET transistor is suitable for use in a variety of applications, including power switching, voltage control, and various other high power applications. The NDD05N50ZT4G is a "single" MOSFET transistor, which means that it is designed to handle a single channel or line of power.
This MOSFET transistor has an exceptionally high current density, with a maximum drain current of 5A and drain-source voltage of 500V. This makes the NDD05N50ZT4G a suitable choice for many high power applications in a range of voltage control and other power applications. It is also a suitable choice for high power switching applications, as it is capable of handling high frequency and high current switching.
The NDD05N50ZT4G is also a high voltage MOSFET transistor, with a maximum drain-source voltage of 500V. This makes it suitable for use in high voltage switching applications, as it can handle a wide range of voltage requirements. In addition, the NDD05N50ZT4G has an exceptionally low on-resistance of 0.3 ohms, and is capable of handling relatively large amounts of power.
The NDD05N50ZT4G is designed to operate in either of two modes. In the enhancement mode, the device acts as a normally open switch, allowing the passage of current when the Gate voltage is increased above the threshold voltage. In the depletion mode, the device acts as a normally closed switch, allowing the passage of current when the Gate voltage is decreased below the threshold voltage. The NDD05N50ZT4G is designed to operate in the enhancement mode.
The NDD05N50ZT4G is designed to have excellent thermal characteristics, making it well-suited for many high power applications. The device offers an impressive RDS(on) of 0.3 ohms and high Gain-bandwidth product of 10 GHz, making it suitable for a wide range of power applications. Additionally, the NDD05N50ZT4G has an impressive thermal resistance of 0.6 K/W, allowing it to dissipate heat quickly and efficiently.
The NDD05N50ZT4G is a fully specified device, with a wide frequency range and a wide range of operating conditions. This makes the NDD05N50ZT4G suitable for use in a variety of applications, including power switching, voltage control, and various other high power applications. Additionally, the NDD05N50ZT4G is one of the most popular ZETEX Series of power MOSFET transistors, and can easily be purchased from a variety of suppliers.
The specific data is subject to PDF, and the above content is for reference
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