Allicdata Part #: | NDD05N50Z-1GOS-ND |
Manufacturer Part#: |
NDD05N50Z-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A IPAK |
More Detail: | N-Channel 500V 4.7A (Tc) 83W (Tc) Through Hole I-P... |
DataSheet: | NDD05N50Z-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NDD05N50Z-1G is an enhancement mode N-Channel MOSFET that has been produced by ON Semiconductor. It is a member of the NDMTO835A package of parts and can be installed on boards that accommodate through-hole technology.
The NDD05N50Z-1G has been designed with a wide variety of applications in mind, including high-side switching for DC-DC converters, motor drive circuits, and relay applications. Its low gate threshold voltage, high drain-source voltage, fast switching speed, and low on-state resistance make it ideal for precise control and switching operations in these applications.
The NDD05N50Z-1G is also well-suited for use in enabling (turn-on) and disabling (turn-off) power supplies, making it a popular choice for industrial, automotive, and consumer equipment applications. Furthermore, its robust build quality and compatibility with low gate charge makes it suited for low-noise analog control designs.
In terms of its working principle, the NDD05N50Z-1G operates in an enhancement mode, where a small voltage applied to the gate of the MOSFET triggers a significantly larger flow of charge between the drain and source terminals. The gate voltage must be greater than a certain threshold voltage, known as the threshold voltage, in order to “turn on” the MOSFET, allowing current to flow between the drain and source. Otherwise, the MOSFET will remain in the off state.
The NDD05N50Z-1G’s gate-source voltage (VGS) operates at a range of -4V to -20V, with an allowable gate-source drain leakage current of no more than 1.0mA. Its drain-source breakdown voltage (BVDSS) stands at 50V, with a maximum drain current (ID) of 5.0A and a maximum drain-source on-state resistance (RDS(on)) rating of 0.511Ω. Other notable specifications are its maximum junction temperature, which stands at 175ºC, and its maximum power dissipation (PD) rating of 19W.
The NDD05N50Z-1G is a highly capable MOSFET with a wide range of applications. Its excellent performance characteristics, robust build quality, and compatibility with low gate charge makes it an ideal choice for precise control and switching operations in high-side switching and power supply designs in consumer, automotive, and industrial equipment applications.
The specific data is subject to PDF, and the above content is for reference
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