NDD03N50ZT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	58W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	329pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.3 Ohm @ 1.15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NDD03N50ZT4G Application Field and Working PrincipleThe NDD03N50ZT4G is an insulated-gate bipolar transistor (IGBT) module designed for use in various electronics and applications. It is available in a variety of configurations from various manufacturers, usually having a breakdown voltage of 600V and a maximum transistor block current of 3.5A.This type of power module is designed for use in a variety of applications, ranging from home automation and electrical vehicles, to industrial control and measuring instruments. It can be used for simple switching applications or for more complex high-end power applications where precise current and voltage control are required.The NDD03N50ZT4G is a three-terminal module, comprising an N-Channel MOSFET, a P-Channel MOSFET, and an Insulated Gate Bipolar Transistor (IGBT). The module uses a gate-source BJT drive that is typically suited to logic-level load switching, pulse width modulation (PWM), and other high-side switching applications. This provides excellent gate resistance, low gate capacitance, and the ability for higher transistor block currents.The NDD03N50ZT4G is a high-performance device and offers fast switching speeds, low power losses, and excellent current and voltage control. It is ideal for digital and analog control electronics as it has a fast switching speed, good efficiency, and excellent EMC characteristics. It also has superior thermal performance and an integrated protection against over-current, over-voltage, and short-circuit.The working principle of the NDD03N50ZT4G is based on the principle of MOSFET and bipolar transistors in order to provide convenient and efficient power control. The module’s internal circuit is composed of two parts: the N-Channel MOSFET and the P-Channel MOSFET. The N-Channel MOSFET uses a BJT drive and is typically suited to logic-level load switching, pulse width modulation (PWM), and other high-side switching applications. The P-Channel MOSFET allows for positive voltage controlling and is typically suited for low-side switching applications. Together, the two parts form a single circuit that is controlled by the gate voltage, which can be adjusted in a wide range of voltages to adjust the power.The NDD03N50ZT4G can be used in a variety of applications, such as motor control systems, power supplies, automotive electronics, digital audio, and robotics. It is ideal for applications where precise current and voltage control are required, as it has a fast switching speed, good efficiency, and excellent EMC characteristics. Furthermore, its integrated protection against over-current, over-voltage, and short-circuit makes it a safe and reliable choice for a variety of projects.

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