NDD04N60ZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NDD04N60ZT4GOSTR-ND |
Manufacturer Part#: |
NDD04N60ZT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 4.1A DPAK |
More Detail: | N-Channel 600V 4.1A (Tc) 83W (Tc) Surface Mount DP... |
DataSheet: | NDD04N60ZT4G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDD04N60ZT4G is a high-performance Trench Gate N-channel MOSFET. This device has low on-resistance and fast switching performance, making it suitable for high-efficiency motor drive, solar inverter and AC-DC converters. It can also be used in a variety of other applications requiring high-speed switching performance.
A MOSFET is an insulated-gate field-effect transistor (IGFET) designed with a gate wrapped in an insulator. In N-channel MOSFETs, the current flows from the source to the drain by means of an inverted channel beneath the gate. Like other field-effect transistors, they are well-suited for high-frequency switching applications.
The NDD04N60ZT4G employs advanced trench gate design to bring robustness and excellent figure of merit to its performance. Its low on-resistance, fast switching times and switching frequency capabilities are ideal for high-efficiency motor drive and solar inverters. The device\'s low gate charge also helps reduce switching loss.
When operating with high currents, the NDD04N60ZT4G\'s trench gate design supports the device\'s operation during high-temperature and high-current conditions. This makes it especially suitable for high-efficiency motor drives, solar inverters and AC-DC converters. The Gate Voltage Drive ratings of the device can provide up to 10V and withstand continuously exceeding 12V. To prevent from inrush current, this device also offers a built-in snubber circuit.
The NDD04N60ZT4G also offers high switching speed and fast turn off thanks to its optimized channel design and gate control layer, which helps reduce the capacitance effect. Low input capacitance and low input-to-output capacitance also make the device suitable for high frequency applications, such as resonant wireless power transfer.
Overall, the NDD04N60ZT4G is a robust and reliable Trench Gate N-channel MOSFET that offers low on-resistance, high withstand voltage and fast switching performance. Its advanced gate design, fast turn-on/turn-off times and snubber circuit make it ideal for high-efficiency motor drives, solar inverters and AC-DC converters. The device\'s low input and output capacitance also make it suitable for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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