NDD03N50Z-1G

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The NDD03N50Z-1G is a single MOSFET, a type of field-effect transistor (FET), that is used in a variety of applications. It is a three-terminal device with a high drain-source voltage (VDS), a low gate-source voltage (VGS), and a low on-resistance, making it ideal for applications requiring a high current on/off switch, such as power supplies, motor control, and high-speed switching.

The NDD03N50Z-1G has a drain-source voltage rating of 150V and a gate-source voltage rating of 40V, making it suitable for high-power applications. It has a maximum drain current of 50A and a low on-resistance of 2.1mΩ, making it ideal for high-power switching and fast switching applications. The device is also reverse-recovery- and reverse-safe-gate-protected for extra protection.

The NDD03N50Z-1G is typically used in power supplies, motor control, and switching applications. It is used as a switch in power supplies to turn off or on power to various components in the system. It can also be used to control the speed of a motor by varying the power supplied to the motor. In high-speed switching applications, it is used to turn on or off rapidly to enable communication between integrated circuits (ICs) or components.

The NDD03N50Z-1G works like a typical MOSFET. It is a three-terminal device, with the gate being the control terminal. By applying a voltage to the gate terminal, an electric field is created which modulates the channel between the drain and source, allowing current to flow through. As the voltage applied to the gate increases, the channel is opened more, allowing more current to flow. When the gate voltage is decreased or turned off, the channel is closed, and no current can pass through.

The NDD03N50Z-1G is designed for applications requiring a high current on/off switch, with a low on-resistance and fast switching times. Its high drain-source voltage and low gate-source voltage make it ideal for power switching and motor control applications, while its reverse-recovery- and reverse-safe-gate-protected design provides extra protection. The NDD03N50Z-1G is a great choice for applications requiring a robust and reliable MOSFET.

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