NSVBC856BM3T5G Allicdata Electronics
Allicdata Part #:

NSVBC856BM3T5GOSTR-ND

Manufacturer Part#:

NSVBC856BM3T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 65V 0.1A SOT-723
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 265m...
DataSheet: NSVBC856BM3T5G datasheetNSVBC856BM3T5G Datasheet/PDF
Quantity: 8000
8000 +: $ 0.03638
16000 +: $ 0.03093
24000 +: $ 0.02911
56000 +: $ 0.02729
Stock 8000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 265mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Description

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The NSVBC856BM3T5G is a bipolar junction transistor, more commonly referred to as a BJT, which is a single component integrated circuit semiconductor. This type of semiconductor is used to supplement other components and has many applications in electronics. The primary purpose of this BJT is to switch, amplify and reduce current voltages. A common use for a BJT is the relay switch which is used to switch between two different states and in turn controls a device.

To understand the working principle of the NSVBC856BM3T5G transistor, it is necessary to understand the basics of how a typical BJT operates. In a bipolar junction transistor, there are three regions which are known as Base, Emitter, and Collector. Current flows from the Emitter lead towards the Collector via the Base. The current controlled by a signal applied to the Base, either turning it on or off.

The typical working principle for a semiconductor device such as the NSVBC856BM3T5G is governed by the size of the Base-Emitter reverse voltage and the size of the Collector-Emitter forward voltage. When the Base-Emitter reverse voltage is greater than the Collector-Emitter forward voltage, then the transistor is said to be "off", meaning that the current flow is not continuous. If the reverse voltage is greater than the Collector-Emitter forward voltage, then the transistor will turn "on" and the current will flow.

The NSVBC856BM3T5G is primarily used in dc-to-dc converters, audio amplifiers and switching circuits. It can also be used in power amplifiers and supply regulators. In addition, the transistor is capable of providing significant power amplification, with a maximum rated power dissipation of 1000 W.

The transistor is capable of providing an input impedance of 10-20 kilohms and an output impedance of 5-10 kilohms. This allows the transistor to provide high quality audio signals with low distortion and low noise. Furthermore, the transistor offers a strong input signal with minimal power consumption, which is highly desirable in power amplifier applications.

Overall, the NSVBC856BM3T5G is an excellent choice for a number of high-power amplifier, switch, regulator and audio applications. Its ability to switch and amplify high current or voltage makes it a natural choice for many applications. The transistor\'s input impedance and output impedance also make it well-suited for audio systems and power amplifiers, as it can provide quality audio signals without a large power draw. In addition, its robust construction ensures that it will continue to perform reliably for many years.

The specific data is subject to PDF, and the above content is for reference

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