NSVBC817-16LT1G Allicdata Electronics

NSVBC817-16LT1G Discrete Semiconductor Products

Allicdata Part #:

NSVBC817-16LT1GOSTR-ND

Manufacturer Part#:

NSVBC817-16LT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 225m...
DataSheet: NSVBC817-16LT1G datasheetNSVBC817-16LT1G Datasheet/PDF
Quantity: 9000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are widely used in electronics today and come in many types. One type of transistor is the Bipolar Junction Transistor or BJT. The NSVBC817-16LT1G is a single BJT.

The NSVBC817-16LT1G is a NPN type general-purpose switching transistor with a maximum rated collector emitter voltage of 800V. It has a maximum collector current of 16A and a high switching speed. The transistor’s package is a TO-220AB.

The NSVBC817-16LT1G has a variety of applications. One is its use in high-power switching circuits in which it is used to switch large currents with minimal losses. It is also used in power amplifiers and other audio equipment, as well as some medical and industrial applications.

The basic principle of operation for a BJT is the same for all transistors. The transistor’s terminals are the collector, base, and emitter. Applying a voltage to the collector base junction creates a small current that is amplified as it moves through the emitter. This current is used to control larger currents flowing between the collector and emitter. This amplification process is the principle of operation for all BJT transistors.

The collector and emitter terminals of the NSVBC817-16LT1G can be used to control large currents flowing between them. This is due to the transistor’s high collector current rating and the fact that it is switchable. The base can be used to control the on and off state of the transistor, allowing for very fast switching between the two states.

In conclusion, the NSVBC817-16LT1G is a single BJT transistor used in a variety of applications such as high-power switching circuits, power amplifiers, medical and industrial applications. Its basic principle of operation is the same for all BJT transistors, and allows for the controlling of the on and off state of the transistor with a small current. This makes it ideal for many applications that require fast switching and high currents.

The specific data is subject to PDF, and the above content is for reference

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