
NSVBC857CWT1G Discrete Semiconductor Products |
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Allicdata Part #: | NSVBC857CWT1GOSTR-ND |
Manufacturer Part#: |
NSVBC857CWT1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150m... |
DataSheet: | ![]() |
Quantity: | 6000 |
3000 +: | $ 0.04498 |
6000 +: | $ 0.04048 |
15000 +: | $ 0.03599 |
30000 +: | $ 0.03374 |
75000 +: | $ 0.02999 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
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The NSVBC857CWT1G is a small signal, surface mount NPN transistor that’s manufactured by Nest-Semi. It is classified as a single Bipolar Junction Transistor (BJT).
This transistor is intended to be used in low-current, low-voltage, low-power applications such as switches, level shifters and signal amplifiers. It is suitable for use in digital, analog and power management circuits.
The NSVBC857CWT1G is constructed with a PN substrate, NPN collector-base junction and a NPN emitter-base junction. It has a maximum voltage rating of 30V and a DC current rating of 0.3A. It also has a power dissipation of 500mW and a maximum gain of much as 200.
Because of its high current gain, this transistor is generally used to switch between low and high current levels. It can be used in combination with other transistors to provide amplification to audio signals, for example. It is also used to provide logic gate level shifts by switching between high and low thresholds.
The NSVBC857CWT1G is a low-cost, low-power but relatively high-speed transistor. It has a wide operating temperature range of -55°C to +175°C.
The basic structure of the transistor consists of three terminals; the Collector, the Base and the Emitter. The Base terminal acts as a control element, which can be used to control the current flow between the Collector and the Emitter.
The current flowing through the Collector – Emitter terminal is determined by the amount of current flowing through the Base Terminal. A small current flowing through the Base terminal is amplified by a large current flowing through the Collector-Emitter terminal.
The power supply voltage is applied to the collector, while the emitter is connected to the ground. A small current is applied to the base, which then controls the Collector to Emitter current flowing through the transistor. By controlling the current through the base, the amount of current through the Collector to Emitter connection can be controlled.
The NSVBC857CWT1G can be used in a variety of applications, including switching, level shifting, current amplification, voltage regulation, and power management. It is an excellent choice for a low-cost, low-power transistor that offers high-speed switching.
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