NSVBC857CWT1G Allicdata Electronics

NSVBC857CWT1G Discrete Semiconductor Products

Allicdata Part #:

NSVBC857CWT1GOSTR-ND

Manufacturer Part#:

NSVBC857CWT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150m...
DataSheet: NSVBC857CWT1G datasheetNSVBC857CWT1G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04498
6000 +: $ 0.04048
15000 +: $ 0.03599
30000 +: $ 0.03374
75000 +: $ 0.02999
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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The NSVBC857CWT1G is a small signal, surface mount NPN transistor that’s manufactured by Nest-Semi. It is classified as a single Bipolar Junction Transistor (BJT).

This transistor is intended to be used in low-current, low-voltage, low-power applications such as switches, level shifters and signal amplifiers. It is suitable for use in digital, analog and power management circuits.

The NSVBC857CWT1G is constructed with a PN substrate, NPN collector-base junction and a NPN emitter-base junction. It has a maximum voltage rating of 30V and a DC current rating of 0.3A. It also has a power dissipation of 500mW and a maximum gain of much as 200.

Because of its high current gain, this transistor is generally used to switch between low and high current levels. It can be used in combination with other transistors to provide amplification to audio signals, for example. It is also used to provide logic gate level shifts by switching between high and low thresholds.

The NSVBC857CWT1G is a low-cost, low-power but relatively high-speed transistor. It has a wide operating temperature range of -55°C to +175°C.

The basic structure of the transistor consists of three terminals; the Collector, the Base and the Emitter. The Base terminal acts as a control element, which can be used to control the current flow between the Collector and the Emitter.

The current flowing through the Collector – Emitter terminal is determined by the amount of current flowing through the Base Terminal. A small current flowing through the Base terminal is amplified by a large current flowing through the Collector-Emitter terminal.

The power supply voltage is applied to the collector, while the emitter is connected to the ground. A small current is applied to the base, which then controls the Collector to Emitter current flowing through the transistor. By controlling the current through the base, the amount of current through the Collector to Emitter connection can be controlled.

The NSVBC857CWT1G can be used in a variety of applications, including switching, level shifting, current amplification, voltage regulation, and power management. It is an excellent choice for a low-cost, low-power transistor that offers high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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