NSVBC817-40WT1G Allicdata Electronics

NSVBC817-40WT1G Discrete Semiconductor Products

Allicdata Part #:

NSVBC817-40WT1GOSTR-ND

Manufacturer Part#:

NSVBC817-40WT1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN GP 45V 500MA SC70-3
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 460m...
DataSheet: NSVBC817-40WT1G datasheetNSVBC817-40WT1G Datasheet/PDF
Quantity: 3000
1 +: $ 0.03200
10 +: $ 0.03104
100 +: $ 0.03040
1000 +: $ 0.02976
10000 +: $ 0.02880
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 460mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70 (SOT323)
Description

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NSVBC817-40WT1G is a single bipolar transistor (BJT) that is often used in electronic applications. It is made from a silicon material and has a rated voltage of 40V and a maximum collector current of 250mA. The device is often found in audio-visual and electrical applications where small size and low power are important.The NSVBC817-40WT1G is primarily used as a switch due to its high current gain and low voltage drop. Its output characteristics make it a great choice for low-voltage applications such as automative electronics, industrial controls, and medical electronics. This device can also be used in amplifier circuits since it can handle relatively large power signals.In terms of its working principle, the NSVBC817-40WT1G detects and amplifies small electrical signals. It is a type of transistor called a bipolar junction transistor (BJT). This transistor has three terminals – collector, base, and emitter. When current is applied to the base of the transistor, it allows current to flow between the collector and emitter. This is called “forward” or “conducting” bias, and it provides current gain. When the base current is reversed, the transistor switches “off” and current can not flow.The working principle of the NSVBC817-40WT1G is similar to other BJT transistors, but it does offer unique advantages such as lower power and higher current gain. Furthermore, it is relatively small in size which makes it ideal for use in smaller electronic devices. Because of these properties, the NSVBC817-40WT1G is often used in audio-visual, electrical and automation applications.The NSVBC817-40WT1G offers the powerful combination of low power, high current gain, and low voltage drop, making it an essential component in many applications. It is easy to use and its small size makes it a great choice for small devices. This transistor is ideal for applications that need a switch to control the output of a circuit, such as electric relays, alarms, and motors.The NSVBC817-40WT1G is a versatile single bipolar junction transistor that is often found in audio-visual and electrical applications. Its low power and high current gain make it a great choice for applications that require a switch to control the output of a circuit. With its small size and low voltage drop, the NSVBC817-40WT1G is an essential component for many electronic and automation applications.

The specific data is subject to PDF, and the above content is for reference

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