Allicdata Part #: | NSVBC124EPDXV6T1G-ND |
Manufacturer Part#: |
NSVBC124EPDXV6T1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SS SOT563 DUAL RSTR XSTR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVBC124EPDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.05199 |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 339W |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The NSVBC124EPDXV6T1G is a type of bipolar junction transistors (BJT\'s) which is pre-biased and an array. It is designed to be used as an amplifier and is able to provide and power a high level of efficiency for greater current capacity in a multitude of different applications. The features of the NSVBC124EPDXV6T1G include its low external power supply operating temperature, its high breakdown voltage, and its positive temperature coefficient.
The working principle of the NSVBC124EPDXV6T1G is based on the concept of current flow between two terminals which are connected together. In the case of this device, the two terminals are a collector and an emitter, and the current is determined by the potential difference between these two components. A small amount of current flows through the base in order to generate a larger current, which is then passed through the collector and emitter. This action creates an amplification of the signal, allowing for the generation of a greater output voltage and current.
The NSVBC124EPDXV6T1G is commonly used in consumer electronics, such as cellular phones, laptop computers, and cameras. It can also be used in a variety of other applications, such as radio frequency amplifiers, industrial automation, and in medical and scientific equipment. The pre-biased design of the device is especially useful in situations where the current source and the load source need to be communicating simultaneously and constantly.
The NSVBC124EPDXV6T1G provides many advantages over other types of transistors, such as its low power consumption and its high performance. The device can also be used in a variety of temperature ranges, which allows for its use in a wide variety of applications. It may be used in damp and dusty environments without any risk of failure due to moisture or dust infiltration.
The NSVBC124EPDXV6T1G is also a versatile device, as it is compatible with a variety of different circuit topologies and technologies. This allows it to be used in a variety of different applications and allows the user to optimize the performance of the device for any given application.
The NSVBC124EPDXV6T1G is a versatile device, as it is pre-biased and versatile. It is designed for use in a variety of different applications and is capable of providing a high level of efficiency for greater current capacity. It is an ideal device for use in consumer electronics, industrial automation, medical and scientific applications, and radio frequency amplifiers.
The specific data is subject to PDF, and the above content is for reference
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