NSVB114YPDXV6T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	500mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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The NSVB114YPDXV6T1G is an array of pre-biased bipolar junction transistors (BJT) that is an integral component in a variety of electronic equipment. The array consists of two or three tables of individually connected n-p-n and/or p-n-p transistors, connected to a common substrate. Each table contains a minimum of 8 transistors. The NSVB114YPDXV6T1G is designed for use in both digital and analog systems and has a wide range of application fields. Applications for the array include power management, audio amplifiers, RF amplifiers, instrumentation, data converters and more. This array is also commonly used in automotive electronics and robotics. The pre-biasing of the transistors in the array enables higher speed and improved linearity compared to conventional BJTs. The bias is applied to the substrate in order to achieve a voltage difference between the source and the drain of each transistor, which allows the device to operate at higher frequencies. The internal circuit of the array is also optimized to minimize the effects of stray capacitance and noise. The transistors in the NSVB114YPDXV6T1G array are controlled by a single supply voltage, which allows for strong current control. The transistors in the array are also protected against electrostatic discharge (ESD) and static electricity. The array is also equipped with built-in protection circuits, which prevent accidental destruction of the transistors due to over-current and overvoltage. In terms of its working principle, the NSVB114YPDXV6T1G array is based on the basic principle of current control. This means that current will flow from the collector to the emitter of a transistor when the base-emitter voltage reaches a certain level. The current is then proportional to the voltage applied to the base. The parameters of the transistors, such as voltage and current gains, can be adjusted to obtain the desired characteristics for the application. The NSVB114YPDXV6T1G array is a versatile and reliable component used in many different applications. Its pre-biasing feature provides improved performance and its wide range of application fields make it an ideal choice for various projects. Despite its complexity, its basic working principle is relatively straightforward and makes it easy to use.

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