Allicdata Part #: | NSVB114YPDXV6T1G-ND |
Manufacturer Part#: |
NSVB114YPDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BRT 50V 100MA SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVB114YPDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Description
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The NSVB114YPDXV6T1G is an array of pre-biased bipolar junction transistors (BJT) that is an integral component in a variety of electronic equipment. The array consists of two or three tables of individually connected n-p-n and/or p-n-p transistors, connected to a common substrate. Each table contains a minimum of 8 transistors. The NSVB114YPDXV6T1G is designed for use in both digital and analog systems and has a wide range of application fields. Applications for the array include power management, audio amplifiers, RF amplifiers, instrumentation, data converters and more. This array is also commonly used in automotive electronics and robotics. The pre-biasing of the transistors in the array enables higher speed and improved linearity compared to conventional BJTs. The bias is applied to the substrate in order to achieve a voltage difference between the source and the drain of each transistor, which allows the device to operate at higher frequencies. The internal circuit of the array is also optimized to minimize the effects of stray capacitance and noise. The transistors in the NSVB114YPDXV6T1G array are controlled by a single supply voltage, which allows for strong current control. The transistors in the array are also protected against electrostatic discharge (ESD) and static electricity. The array is also equipped with built-in protection circuits, which prevent accidental destruction of the transistors due to over-current and overvoltage. In terms of its working principle, the NSVB114YPDXV6T1G array is based on the basic principle of current control. This means that current will flow from the collector to the emitter of a transistor when the base-emitter voltage reaches a certain level. The current is then proportional to the voltage applied to the base. The parameters of the transistors, such as voltage and current gains, can be adjusted to obtain the desired characteristics for the application. The NSVB114YPDXV6T1G array is a versatile and reliable component used in many different applications. Its pre-biasing feature provides improved performance and its wide range of application fields make it an ideal choice for various projects. Despite its complexity, its basic working principle is relatively straightforward and makes it easy to use.The specific data is subject to PDF, and the above content is for reference
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