Allicdata Part #: | NSVMUN5314DW1T3G-ND |
Manufacturer Part#: |
NSVMUN5314DW1T3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 50V BIPO SC88-6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVMUN5314DW1T3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05485 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NSVMUN5314DW1T3G is a third generation pre-biased bipolar junction transistor (BJT) array. It is specifically designed for use in applications where high reliability and low power is of the utmost priority. This device uses two independent double pre-biasedNPN emitter-coupled transistors, each with a pre-biased PNP series array. This array allows for the connection of up to four transistors in series, while the input and output terminals are separate. The NSVMUN5314DW1T3G is tailored for applications such as radio frequency (RF) amplifiers, high voltage power switches, and power inverters.
The working principle of the NSVMUN5314DW1T3G BJT array relies on its double pre-biased structure. In a double pre-biased BJT array, current flows from the collector of one transistor to the emitter of the other, creating what is known as a virtual collector-base junction. This virtual junction allows for current amplification, which is the basic premise of BJT amplifiers. This double pre-biased structure provides greater efficiency, as well as better range and transmission than single pre-biased transistors.
The NSVMUN5314DW1T3G is designed to be used in high-reliability applications, such as in the medical, aerospace and defense industries. This device offers excellent signal performance with low power consumption and reliable operation in high voltage and temperature transfer environments. Its input and output are separated, which allows for easier signal management, as well as greater flexibility when it comes to designing circuits. Additionally, the NSVMUN5314DW1T3G features two warning pins, which will indicate if an over-temperature or over-voltage condition has been reached, providing added safety for the user.
The NSVMUN5314DW1T3G has been designed with a variety of applications in mind. As mentioned earlier, this device is perfect for use in RF amplifiers, high voltage power switches and power inverters. Other applications include: voltage sense amplifier, temperature controllers, current limiter, logic level power switches, and gain controlled current sources. Additionally, this device is also suitable for use in low noise circuits requiring low power, or for use in multiple power switch applications.
The NSVMUN5314DW1T3G pre-biased BJT array is the perfect choice for applications where reliable, low-power performance is of the utmost importance. Its double pre-biased structure provides greater efficiency and higher power output, while its independent PNP series array allows for easy connection of multiple transistors in series. This device offers excellent signal performance with low power consumption and features two warning pins to indicate over-temperature or over-voltage conditions. With its versatile range of applications, the NSVMUN5314DW1T3G is sure to provide reliable performance in any application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSVMMUN2212LT1G | ON Semicondu... | 0.05 $ | 12000 | TRANS PREBIAS NPN 0.246W ... |
NSVMMUN2133LT1G | ON Semicondu... | 0.05 $ | 9000 | TRANS PREBIAS PNP 0.246W ... |
NSVMMUN2232LT1G | ON Semicondu... | 0.05 $ | 9000 | TRANS PREBIAS NPN 246MW S... |
NSVMMBD352WT1G | ON Semicondu... | 0.07 $ | 3000 | DIODE ARRAY SCHOTTKY 7V S... |
NSVMMBD353LT1G | ON Semicondu... | 0.11 $ | 3000 | DIODE ARRAY GP 7V SOT23-3... |
NSVM1MA141WAT1G | ON Semicondu... | 0.04 $ | 1000 | DIODE SW 40V DUAL CA SC70... |
NSVM1MA152WAT1G | ON Semicondu... | 0.05 $ | 1000 | DIODE SW 80V DUAL CA SC59... |
NSVM1MA152WKT1G | ON Semicondu... | 0.05 $ | 1000 | DIODE SW 80V DUAL CC SC59... |
NSVMMBD717LT1G | ON Semicondu... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V SC70-3... |
NSVMBD54DWT1G | ON Semicondu... | 0.14 $ | 1000 | DIODE SCHOTTKY DUAL 30V S... |
NSVMSB1218A-RT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PNP BIPOLAR SOT323-... |
NSVMMBT5087LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS PNP 50V 0.05A SOT23... |
NSVMMBT5551M3T5G | ON Semicondu... | 0.04 $ | 1000 | TRANS NPN 160V 0.06A SOT-... |
NSVMMBT5401WT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PNP BIPO 150V SC70-... |
NSVMMBT2907AM3T5G | ON Semicondu... | 0.04 $ | 1000 | SS GP PNP TRANSISTORBipol... |
NSVMMBT4401WT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS NPN 40V BIPOLAR SC7... |
NSVMMBT5088LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS NPN 30V 0.05A SOT23... |
NSVMSA1162GT1G | ON Semicondu... | 0.05 $ | 1000 | TRANS PNP 45V BIPOLAR SC5... |
NSVMSD601-RT1G | ON Semicondu... | 0.05 $ | 1000 | TRANS NPN 50V BIPOLAR SC5... |
NSVMSD42WT1G | ON Semicondu... | 0.08 $ | 1000 | TRANS NPN 300V 0.15A SC70... |
NSVMSB92T1G | ON Semicondu... | 0.08 $ | 1000 | TRANS PNP 300V BIPOLAR SC... |
NSVMMBT589LT1G | ON Semicondu... | 0.15 $ | 1000 | TRANS PNP 30V 1A SOT-23Bi... |
NSVMMBT6517LT1G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 350V 0.1A SOT23... |
NSVMMUN2235LT1G | ON Semicondu... | 0.05 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
NSVMUN5333DW1T1G | ON Semicondu... | 0.03 $ | 3000 | TRANS PREBIAS NPN/PNP SOT... |
NSVMUN5211DW1T3G | ON Semicondu... | 0.06 $ | 10000 | TRANS 2NPN PREBIAS 50V SO... |
NSVMUN5312DW1T2G | ON Semicondu... | 0.07 $ | 3000 | TRANS NPN/PNP 50V BIPO SC... |
NSVMMUN2114LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS PNP BIPO 50V SOT23-... |
NSVMMUN2232LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
NSVMMUN2113LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS PNP SOT23-3... |
NSVMMUN2233LT3G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
NSVMUN2233T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 230MW S... |
NSVMUN2237T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.23W S... |
NSVMUN5131T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS PNP 0.202W ... |
NSVMUN5236T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.202W ... |
NSVMUN2112T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PNP 50V BIPOLAR SC5... |
NSVMUN5237T1G | ON Semicondu... | 0.04 $ | 1000 | TRANS NPN 50V BIPOLAR SC7... |
NSVMMUN2137LT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
NSVMMUN2237LT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
NSVMMUN2236LT1G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 50V SOT... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...