Allicdata Part #: | NSVMUN5331DW1T1G-ND |
Manufacturer Part#: |
NSVMUN5331DW1T1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 50V BIPO SC88 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVMUN5331DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07073 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Description
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Introduction The NSVMUN5331DW1T1G is a type of bipolar junction transistor (BJT), an electrically operated switch. As a semiconductor device, it utilizes its integrated circuitry to create a wide array of switching possibilities. This specific model is an Array Pre-Biased type, indicating that the voltage between the collector and emitter has been preset at the semiconductor factory. This helps to achieve faster switching times, higher input impedance levels, and greater reliability than non-prebiased BJT\'s. Application FieldsThe NSVMUN5331DW1T1G transistor is most frequently used in the automotive industry. This is because of its ability to withstand harsh environmental conditions, such as extreme temperatures and vibrations. As a result, the NSVMUN5331DW1T1G can be employed in car wiring, heating/cooling systems, audio/visual systems, and in the engine control unit. Its small size allows for easy installation and operation, as well as greater portability. In addition, the NSVMUN5331DW1T1G is suitable for use in alarm systems, medical monitoring systems, high-end audio equipment, and communication systems. As a Pre-Biased transistor, its robustness and low power requirements make it particularly useful for these applications. Advantages The NSVMUN5331DW1T1G transistor excels in areas of reliability and power efficiency. As a Pre-Biased transistor, it requires only a small current to switch on and off. This makes it superior to non-prebiased transistors in terms of speed and power conservation. Furthermore, its insulated gate keeps out electrostatic and radiation interference, ensuring accuracy in all operations. The NSVMUN5331DW1T1G also benefits from an extremely low on-resistance rating (RON) and forward voltage rating (VF). This helps to minimize power losses due to resistant heating. Furthermore, its high pulse power levels provide exceptional performance even in harsh environments. Working Principle The NSVMUN5331DW1T1G transistor works by utilizing the electric field created between its collector and emitter. When a voltage is applied to the base of the transistor, it allows a current to flow from the collector to the emitter. As a result, the transistor switches on and off depending on the voltage at the base. The NSVMUN5331DW1T1G is designed to operate within a voltage range of 0.5V to 12V. At low voltages (less than 0.5V), the transistor acts as an open circuit and does not allow current to flow. At greater voltages (greater than 12V), the transistor acts as a closed circuit and allows current to flow. This allows the transistor to be used in a variety of applications across numerous fields. Conclusion The NSVMUN5331DW1T1G is truly a versatile transistor. With its low RON and VF ratings, its resistance to electrostatic interference and radiation, and its ability to deal with extreme temperatures and vibrations, it has a range of application potentials. From car wiring, audio/visual systems, alarm systems, medical devices and communication equipment, this transistor provides an effective, reliable and power efficient solution for a variety of requirements.The specific data is subject to PDF, and the above content is for reference
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