Allicdata Part #: | NTMFD4901NFT3G-ND |
Manufacturer Part#: |
NTMFD4901NFT3G |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3... |
DataSheet: | NTMFD4901NFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.70813 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A, 17.9A |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 15V |
Power - Max: | 1.1W, 1.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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The NTMFD4901NFT3G belongs to a family of high-voltage, lateral power metal-oxide-semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power applications. As a vertical dual N-channel FET, it offers lower on-resistance characteristics than single N-channel MOSFET devices and consequently allows for higher current conduction. In addition, it supports high operating temperature ranges and suitable for both high-speed switching and high-voltage power applications without compromising power efficiency or reliability.
The NTMFD4901NFT3G is organized into a 3-stage vertical FET array that consists of two N-channel devices. The gate terminal of each device is connected to a common Drain-Source voltage that is supplied externally to the package. When the gate control terminal is upgraded, electrons from the source are forced to move towards the drain and vice versa when the gate voltage is reduced. This process creates a high current conducting channel between the source and drain pins. This is known as the pinch-off mode of operation.
The NTMFD4901NFT3G provides excellent ESD protection, a wide range of voltage tolerances, and the enhanced performance features such as lower on-resistance, high-speed switching, and power efficiency. All these features help in realizing potential applications in automotive, lighting and industrial applications, wireless communication systems, servers, and other power electronics systems. For example, NTMFD4901NFT3G can be used in industrial motor control systems, motor drive motor control and switching power supplies, high power amplifier systems, and other high power applications.
In addition, NTMFD4901NFT3G also provides protection against electrostatic discharge (ESD) up to 8 kilovolts in both Human Body Model (HBM) and Machine Model (MM) configurations. Moreover, it provides good thermal performance, has a low gate charge, and can operate at temperatures up to +125⁰C for enhanced switching efficiency. Thus, the NTMFD4901NFT3G offers a reliable and cost-effective solution for power electronics applications requiring higher-power density and operation.
Due to its advanced features, the NTMFD4901NFT3G is used in a variety of applications. In automotive applications, it can be used in engine control, antilock brake systems, and fuel injectors. In lighting technologies, it is used in LED driver applications, and it can also be used in industrial motors, robotics, and telecommunications applications.
In conclusion, the NTMFD4901NFT3G is a cost-effective and high-performance solution for power electronics applications such as automotive, lighting and industrial applications, wireless communication systems, servers, and other power electronics systems. With its excellent ESD protection, wide range of voltage tolerances, and enhanced performance features, it offers reliable and power efficient solutions for today’s demanding applications.
The specific data is subject to PDF, and the above content is for reference
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