Allicdata Part #: | NTMFS5C604NLT3G-ND |
Manufacturer Part#: |
NTMFS5C604NLT3G |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 40A SO-8FL |
More Detail: | N-Channel 60V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NTMFS5C604NLT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.33261 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta), 287A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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One of the most important, and most commonly used, types of transistors today is the NTMFS5C604NLT3G. It is an insulated gate bipolar transistor (IGBT) and is often used in power distribution and high-power logic circuits. The NTMFS5C604NLT3G has been developed to provide a range of high-powered switching capabilities and is used extensively in a range of industrial applications.
In terms of its physical structure, the NTMFS5C604NLT3G consists of an array of two gate, two source and two drain terminals. The IGBT is typically constructed with a gallium-nitride (GaN) barrier and a silicon junction. This configuration offers a number of advantages, such as low on-resistance and high off-channel resistance. The NTMFS5C604NLT3G also features an ESD protected gate terminal and an electrostatic discharge (ESD) protected drain terminal.
Typically, the NTMFS5C604NLT3G operates with two different functions. When it is used as a low-side switch, the gate terminal opens and the drain terminal closes. Alternatively, when used as a high-side switch, the gate opens and the source closes. By alternating between these two functions, the NTMFS5C604NLT3G can be used to control the power delivered to a load.
The NTMFS5C604NLT3G is most commonly used in power distribution and high-power logic circuits. When used in power distribution applications, it can be used to switch large current loads quickly and efficiently. In high-power logic circuits, it can be used as an amplifier or a switch. In both cases, it is designed to provide reliable, cost-effective performance.
In terms of it working principles, the NTMFS5C604NLT3G operates in a similar way to the field-effect transistor (FET). In a FET, the current flow is controlled by the gate voltage. In the case of the NTMFS5C604NLT3G, the gate voltage is controlled by a PN junction. When a gate bias is applied, the PN junction provides a current flow between the source and the drain. This flow can be controlled to selectively switch on and off the gate bias to control the current flow. This allows for the efficient regulation of power for a variety of applications.
The NTMFS5C604NLT3G is an excellent choice for those who need to switch high-current loads quickly and efficiently. It has a wide range of applications in both power distribution and high-power logic circuits, and is designed to provide reliable and cost-effective performance in a variety of situations.
The specific data is subject to PDF, and the above content is for reference
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