Allicdata Part #: | NTMFS4C01NT1G-ND |
Manufacturer Part#: |
NTMFS4C01NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 47A SO8FL |
More Detail: | N-Channel 30V 47A (Ta), 303A (Tc) 3.2W (Ta), 134W ... |
DataSheet: | NTMFS4C01NT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Ta), 303A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10144pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 134W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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NTMFS4C01NT1G is the type of field-effect transistor (FET), which is a type of semiconductor device. This type of FET is typically utilized as an electronic switch or amplifier in electronic circuits. It has one or more gate terminals or “pins” that can be used to control the electrical current flow. NTMFS4C01NT1G FETs are further classified as N-channel and P-channel depending on the type of current they allow through. Generally, when there is no voltage applied to the gate terminal, or when the voltage is very low, the FET behaves as an open switch and no current flows. As the voltage applied on the gate is increased, the electrical resistance across the drain and source terminals decreases, thereby allowing more current to flow through the transistor. This behavior is what makes NTMFS4C01NT1G FETs useful in electronics.One of the primary applications of NTMFS4C01NT1G FETs is in switches and amplifiers. In a switch application, NTMFS4C01NT1G FETs are used to control the flow of current through an electrical circuit. In an amplifier application, the voltage applied to the gate of the FET is used to control the amount of current that flows from the source to the drain terminal. This in turn controls the voltage and current output amplitude, making it useful in audio amplifiers. In addition to switches and amplifiers, NTMFS4C01NT1G FETs can also be utilized in power regulation applications. By varying the voltage on the gate terminal, the FETs can be used to control the output voltage and current for positive and negative voltage regulation. This type of voltage regulation is commonly used in power supplies, such as switching power supplies. The working principle of NTMFS4C01NT1G FETs is based on the principle of electrical resistance. The gate terminal acts as a control terminal which applies a voltage, thereby controlling the electrical resistance between the source and the drain terminals. When a voltage is applied to the gate, it creates a field that reduces the electrical resistance between the source and drain terminals and thus, allowing more current to pass through. Conversely, when the voltage applied on the gate is low, the electrical resistance between the source and drain terminals is high and current flows through the transistor is reduced. NTMFS4C01NT1G FETs are also used in voltage multiplier and voltage divider circuits. In multiplier circuits, the FETs are used to increase the output voltage of the circuit. In voltage divider circuits, the FETs are used to reduce the output voltage of the circuit. These types of circuits are used in many applications, such as radio frequency and audio amplifiers, AC/DC converters, and so on. In conclusion, NTMFS4C01NT1G FETs are widely used in various applications, such as switches, amplifiers, voltage regulators, voltage multipliers, and voltage dividers. The working principle of these FETs is based on electrical resistance, and the gate terminal is used to control the current flow between the source and drain terminals.
The specific data is subject to PDF, and the above content is for reference
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