NTMFS4C05NT1G Allicdata Electronics

NTMFS4C05NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4C05NT1GOSTR-ND

Manufacturer Part#:

NTMFS4C05NT1G

Price: $ 0.17
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 11.9A SO8FL
More Detail: N-Channel 30V 11.9A (Ta) 770mW (Ta), 33W (Tc) Surf...
DataSheet: NTMFS4C05NT1G datasheetNTMFS4C05NT1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.16800
10 +: $ 0.16296
100 +: $ 0.15960
1000 +: $ 0.15624
10000 +: $ 0.15120
Stock 1000Can Ship Immediately
$ 0.17
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MOSFET transistors are some of the most important components in on-chip electronics, easily found in everything from microprocessors to power supplies. The NTMFS4C05NT1G is a single N-channel MOSFET with low-voltage and high-speed characteristics, ideal for use in magnetic field sensing applications. This article will explain the different application fields and working principle of the NTMFS4C05NT1G.

Purpose and Applications

The NTMFS4C05NT1G is a power MOSFET designed to provide energy efficiency and low-voltage operations over a wide range of applications. These FETs are ideal for high-frequency circuits that require a high-switching speed and low-power consumption.

The NTMFS4C05NT1G can be used in a variety of applications, such as low-voltage switching converters, variable-frequency motor drives, power conditioners, and automotive applications. It is also well suited for use in high-speed switching circuits, such as gate drivers, motor controllers, and high-frequency Class D designs.

Function and Operating Principle

The NTMFS4C05NT1G is a single N-channel MOSFET with a Drain-Source Voltage (VDS) of up to 100V and a maximum Drain Current of 4A. It is often used in a low-voltage switching circuit due to its low on-resistance of 0.1 Ohm. This makes it an ideal choice for applications requiring fast switching speeds and low power consumption.

The NTMFS4C05NT1G operates by allowing current to flow only when the gate voltage is equal to or greater than the threshold voltage. This threshold voltage is typically around 4V for this particular MOSFET, which means that the gate voltage must be equal to or greater than 4V in order for the MOSFET to turn on. When the MOSFET is turned on, current flows from the Drain to the Source.

The NTMFS4C05NT1G is also capable of operating in a magnetic field sensing mode. By applying a positive gate voltage and connecting the source to a magnetic field sensing element, the device can detect when a magnetic field is present and redirects the output current direction to decrease or increase the power on the load. This makes the device an ideal solution for applications requiring both power and magnetic field sensing capabilities.

Conclusion

The NTMFS4C05NT1G is a single N-channel MOSFET designed for low-voltage and high-frequency operations. It is commonly used for a variety of applications like motor controllers, power supplies, and magnetic field sensing. The FET is operated by controlling the gate voltage, which can be used to turn the MOSFET on and off or to detect the presence of a magnetic field.

Overall, the NTMFS4C05NT1G is a powerful and versatile component that can be used for many different applications. Its low on-resistance and high-switching speeds make it an ideal choice for building high-speed and energy-efficient circuits.

The specific data is subject to PDF, and the above content is for reference

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