NTMFS4962NFT3G

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The NTMFS4962NFT3G is a device that falls into the category of Transistors - FETs, MOSFETs - Single. It is a single N-Channel Enhancement Mode MOSFET which features 200V drain to source maximum voltage, down to -55°C maximum junction temperature, 8 ohm maximum RDS(on) resistance and 2.7V maximum threshold voltage.

The NTMFS4962NFT3G application field is mainly for use in automotive power management applications such as: active mode power controller and fast switching body control applications. It’s also suitable for use in battery chargers and portable equipment, as well as for power inverters, DC-DC converters, LV/HV motor drive applications, and switching frequency converters.

In its operation, the NTMFS4962NFT3G acts as a switch that can open and close a circuit allowing the flow of current. When current flows through the junction between the Source and Gate sides of the device, it creates what’s known as a depletion zone, or channel. This channel is able to control the flow and variance of current through the device, which can be regulated by adjusting the applied voltage across the Gate and Source.

The NTMFS4962NFT3G is operated in the following way: firstly, when a positive voltage is applied to the Gate terminal relative to the Source of the device, a depletion zone is created in the channel. This allows the Gate to Source voltage threshold to be stable until it reaches the level appropriate for device conduction. The voltage across the Gate and Source of the MOSFET determines the level of modulation for current flow, or in other words, controls the conduction resistance.

Second, when the voltage at the Gate increases to the level which is sufficient to create a depletion zone, the current travelling through the MOSFET increases and current conduction becomes linear in nature due to the presence of the channel. The boarder of the channel, which is determined by Gate control, allows the MOSFET to act as an adjustable resistance, resulting in current modulation.

Third, when the voltage at the Gate is reduced to a negative level, it destroys the potential needed to support the channel and make it conductive. The depletion zone is no longer present and the device acts as an open circuit, shorting the Source and Drain, thus allowing the current flow to instantly stop.

In summary, the NTMFS4962NFT3G is mainly used for power management applications in the automotive industry, and is an ideal device for applications such as active mode power controllers, fast switching body control systems, battery chargers and portable equipment, dc-dc converters and switching frequency converters. Its operating principle consists of applying voltages to it in order to create a depletion zone that allows the MOSFET to manifest as a resistance suitable for current conduction or as an open circuited switch for controlling current modulation.

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