NTMFS5C404NLTWFT1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.9W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	12168pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	181nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	0.75 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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This article will focus on the NTMFS5C404NLTWFT1G and its application field and working principle. The NTMFS5C404NLTWFT1G is part of the family of transistors, FETs, and MOSFETs, more specifically Single. It is important to understand the characteristics and capabilities of this distinctive transistor in order to correctly and effectively utilize it in various applications.This article will define what a FET is, explain the application field and working principle of the NTMFS5C404NLTWFT1G transistor, and discuss the design considerations and circuit configurations. A FET (field-effect transistor) is an active electronic component that consists of semiconductor materials and can control the flow of electric current. It is an unipolar device, meaning it has a single polarity and can only operate with one type of charge carriers. The NTMFS5C404NLTWFT1G is an epitaxial planar-gate, Enhancement-mode FET transistor. The device features an advanced MOS (Metal Oxide Semiconductor) structure, designed for high voltage operation and internalses a low-on-resistance to increase circuit efficiency. In terms of its application field, the NTMFS5C404NLTWFT1G is best used for load switching, amplifier applications, and preamplifier circuits.Regarding its working principle, the NTMFS5C404NLTWFT1G operates based on a depletion-mode MOSFET. This means that the input signal applied to the gate of the transistor must lower the voltage for the transistor to be in its conductive state. In other words, the NTMFS5C404NLTWFT1G requires a negative voltage on the gate in order to turn it on. The primary design consideration with the NTMFS5C404NLTWFT1G is ensuring that the transistor returns to its off state after the input signal is removed. This can be accomplished maximum with pull-down or pull-up circuitry, depending on the application. In addition, specialized circuits can be used to increase the amount of current that the NTMFS5C404NLTWFT1G can handle. One such circuit is the cascode configuration, which adds an additional transistor in parallel to the FET being used. This configuration can be used to increase the device broadband more than 15 MHz. In conclusion, the NTMFS5C404NLTWFT1G is an epitaxial planar-gate, Enhancement-mode FET transistor, best used for load switching, amplifier applications, and preamplifier circuits. To properly design and utilize this transistor, special consideration must be taken in terms of returning the transistor to its off state, and utilizing either pull-down or pull-up circuitry as necessary. Furthermore, circuitry such as the cascode configuration can be used to increase the device’s bandwidth and current-handling capabilities. Overall, the NTMFS5C404NLTWFT1G is an effective device when designed and utilized correctly.

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