Allicdata Part #: | NTMFD5C466NLT1G-ND |
Manufacturer Part#: |
NTMFD5C466NLT1G |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 40V LL S08FL DS |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 14A (Ta), 52A ... |
DataSheet: | NTMFD5C466NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.58441 |
Series: | -- |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 52A (Tc) |
Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 997pF @ 25V |
Power - Max: | 3W (Ta), 40W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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MOSFET, short for Metal-Oxide-Semiconductor Field Effect Transistor, is a type of solid-state transistor that utilizes a field effect to control the current in a circuit. The NTMFD5C466NLT1G is an array of several MOSFETs, each with its dedicated gate, drain, and source connections. The array\'s field-effect transistors can be used to create a variety of electronic systems, from simple switches and voltage dividers to complicated logic networks and analog circuits.
The NTMFD5C466NLT1G MOSFET array is a versatile device that can be used in a variety of applications. One of its primary uses is in power management, where it can provide high-frequency precision switching and power conversion. It can also be used in audio applications, where its low impedance, high-speed switching capabilities can provide better sound quality. Additionally, the MOSFET\'s low power consumption makes it ideal for low-power portable devices, such as cell phones, handheld computers, and other similar devices.
In addition to its practical applications, the NTMFD5C466NLT1G MOSFET array can also be used in research and development applications. It can be used to study the basics of MOSFET technology and behavior. Additionally, it can be used to develop and prototype new devices and technologies. By studying the performance of the device in different environments, engineers can gain valuable insight into the physics of the MOSFET and develop new devices and technologies.
The NTMFD5C466NLT1G MOSFET array works by controlling the flow of current between the source and drain. When the gate voltage is applied to the device, it creates a field effect that prevents current from passing through the drain and source connection. This allows the device to act as a switch, controlling the current flow within the circuit. When a voltage is applied to the source terminal, a current is created that can be used to control the voltage at the drain terminals, thus enabling the user to control the current within the circuit. In addition, the device’s low-impedance characteristics, the ability to switch quickly, and its low power consumption make it ideal for audio applications and low-power, portable devices.
The NTMFD5C466NLT1G MOSFET array is a versatile device that can be used in a variety of applications, from simple voltage regulators to complex audio systems. Its unique characteristics make it an excellent choice for a variety of applications, including power management, low-power portable devices, research and development, and audio applications. By utilizing the array’s high-frequency, low-impedance characteristics and its low power consumption, engineers and designers can create sophisticated solutions to a variety of challenges.
The specific data is subject to PDF, and the above content is for reference
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