NTMFS4926NT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	920mW (Ta), 21.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1004pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

N-Channel MOSFETs (Field-Effect Transistors) are devices capable of amplifying and switching electric signals. In the past, these have been employed extensively, from power management units to switching systems. One of the amplified MOSFETs is the NTMFS4926NT1G, which has been designedleverage the maximum benefits of low switching losses, minimum gate charges, and low on-resistance values. This article will provide an overview of the NTMFS4926NT1G MOSFET, its application field, and working principle.

Overview of NTMFS4926NT1G

The NTMFS4926NT1G is a 30V N-channelMOSFETs, which has been manufactured with a gallium-doped silicon gate oxide. The gate oxide of the NTMFS4926NT1G is constructed with a gate oxide thickness of 3nm, the gate oxide thickness of the device is identical to the previous generation. The device is capable of providing up to 8A of current and has a maximum drain-source breakdown (BVdss) of 30V, which is also equivalent to the previous generation, as well. The device only require as little as 0.85V to turn it on, reducing the need for a gate-driving circuit. The device also features a low gate-source leakage current (Igs) value, with a typical value of 8nA @ 1.8V.

Application Field of the NTMFS4926NT1G

The NTMFS4926NT1G is a specialized MOSFET designed for low power applications. This device can be seen in various fields, ranging from handheld electronic devices like smartphones and electronic tablets, to light-duty home appliance switching circuits. The device has also been widely employed in the power management systems found in laptops and desktop computers.The NTMFS4926NT1G is also well suited for other applications, such as low voltage audio amplifiers and motor drives. The low voltage and low On-Resistance value enables it to reduce power losses while still remaining efficient, thus making it highly suitable for these low power applications.

Working Principle of NTMFS4926NT1G

N-Channel MOSFET (Field-Effect Transistors) are voltage-controlled semiconductor devices that operate on a principle known as the “MOSFET Effect”. This phenomenon involves the rectifying action of the electric field which is established between the gate-source and gate-drain regions. This electric field serve to control the flow of electric current through the channel between the source and drain regions. When gate voltage applied to the MOSFET, this electric field of the device is modulated and it increase the conductivity of the channel. The more applied gate voltage, the greater the conductivity of the channel.When an N-Channel MOSFET is in an Off-state, the electric field that is established between the gate and the drain regions is known as the depurated electric field. On the other hand, when an N-Channel MOSFET is in an On-state, the electric field that is established between the gate and the drain regions is known as the potentiated electric field. This electric field enhance the conductivity of the channel.

Conclusion

The NTMFS4926NT1G MOSFET is a specialized device designed for low-power applications. It has been designed for maximum benefit of low switching losses, so it can be used for different application such as in power management, light-duty home appliance, audio amplifiers, and motor drives. The device also features a low gate-source leakage current value, with a typical value of 8nA @ 1.8V. The device is also capable of switching currents up to 8A and drain-source breakdown (BVdss) of 30V. It only requires as little as 0.85V to turn device on. This device operates based on the "MOSFET Effect" phenomenon, which involves the modulation of the electric field established between the gate-source and gate-drain regions.

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