| Allicdata Part #: | NTMFS4839NHT3G-ND |
| Manufacturer Part#: |
NTMFS4839NHT3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 9.5A SO-8FL |
| More Detail: | N-Channel 30V 9.5A (Ta), 64A (Tc) 870mW (Ta), 42.4... |
| DataSheet: |  NTMFS4839NHT3G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 870mW (Ta), 42.4W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2354pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 43.5nC @ 11.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
| Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 64A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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MOSFETs are a class of transistors that are utilized for several different applications in electrical engineering. In particular, the NTMFS4839NHT3G MOSFET is a powerful, high power semiconductor device. It is an enhancement-mode, N-type MOSFET that has been designed for high power applications.
The NTMFS4839NHT3G is a popular choice for applications such as power switching, amplifier circuits, and switching power converters. It is also often used for the control of motors, enabling the efficient and reliable control of very large powers.
The NTMFS4839NHT3G is characterized by a few important technical parameters such as the gate-source threshold voltage, the on-state rds-on resistance, the breakdown voltage, and the maximum drain current. The gate-source threshold voltage of this MOSFET is 4V, which indicates that it has the capacity to start operation around this voltage level. The on-state rds-on resistance of this MOSFET is 3.6 ohms, while the breakdown voltage is 40V. The maximum drain current of this MOSFET is 39A.
This MOSFET is best suited for power switching applications, due to its high power, low threshold voltage, and a very low gate-source capacitance. It can be used to efficiently control very large power loads, such as motors. The device can also be used for the control of power converters, amplifiers, and other circuits.
The working principle of the NTMFS4839NHT3G is identical to other MOSFETs. When a current is applied to the gate, it creates an electric field that attracts free electrons onto the gate. This, in turn, changes the conductivity of the drain-source channel and allows current to flow through it. This process is reversible and can be used to precisely control current flow.
The NTMFS4839NHT3G is a powerful and reliable device that is well-suited for many different applications. It is characterized by high power, low threshold voltage, and a very low gate-source capacitance. This allows it to efficiently control large power loads. The device is particularly popular for its use in power switching, amplifier circuits, and switching power converters.
The specific data is subject to PDF, and the above content is for reference
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