NTMFS4846NT3G Allicdata Electronics
Allicdata Part #:

NTMFS4846NT3G-ND

Manufacturer Part#:

NTMFS4846NT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 12.7A SO-8FL
More Detail: N-Channel 30V 12.7A (Ta), 100A (Tc) 890mW (Ta), 55...
DataSheet: NTMFS4846NT3G datasheetNTMFS4846NT3G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
Series: --
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4846NT3G is a high performance 300-volt N-channel MOSFET designed for switching applications in the automotive industry. This device is ideal for low voltage applications. It has an extremely low on-resistance and is designed for a wide range of operations, making it suitable for a variety of applications. This device provides superior reliability, superior thermal characteristics, and is highly efficient.

The NTMFS4846NT3G is a single-channel, low-voltage, high-current MOSFET device with a maximum drain-source voltage (VDS) rating of 300 V. This device is an optimized, high-power solution that enables more efficient and stable operation and provides greater flexibility in design. It features an advanced and highly innovative chip technology that provides superior reliability and outstanding thermal characteristics. The device operates within the parameters of the PowerSO package, and it has a maximum current rating of 48A.

The device is designed for a wide range of operations including power management, power conversion and signal conditioning applications. The superior switching characteristics of the device make it ideal for using in synchronous buck and boost converters, DC-DC converters, inverters, and microwave power amplifier designs. It can also be used in battery chargers and LED lighting systems, as well as in automotive powertrain systems.

The working principle behind the NTMFS4846NT3G is the MOSFET technology. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is an electronic component, based on insulated gate field-effect technology, which uses a gate-controlled structure to control transfer current between source and drain terminals, making it highly efficient and effective. MOSFET transistors are highly-scalable and can be used with a variety of applications including motor control, power distribution, signal conditioning and more.

MOSFET transistors use the source, gate and drain terminals to control current through the N-Channel MOSFET. When the gate terminal is at a positive voltage, it creates a conducting channel between the source and drain terminals, allowing current flow from the source to the drain. When the gate is at a negative voltage, it creates an insulating or blocking layer which does not allow current flow. It is this principle of operation that enables the device to act as an electronic switch, turning on and off a circuit.

The NTMFS4846NT3G is designed for a wide range of applications in the automotive industry such as powertrain systems, power management, power conversion and signal conditioning. It is characterized by its high peak current, low output capacitance and low on-state resistance. This device is ideal in applications that require superior switching performance, reliability and thermal characteristics.

The specific data is subject to PDF, and the above content is for reference

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