NTMFS4833NT3G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	910mW (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	88nC @ 11.5V
Series:	--
Rds On (Max) @ Id, Vgs:	2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta), 156A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The NTMFS4833NT3G is a N-Channel Enhancement Mode MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is a single MOSFET and is used in electronic designs that require a switch or amplifier in order to provide a level-shifting capability. The NTMFS4833NT3G has a range of features which make it ideal for use as a switch, or level shifter in various electronic designs.</p><p>In any electronic device, the power is managed and routed through the device\'s main transistors. In order to ensure that the device runs efficiently and without issues, the transistors must meet certain criteria. The NTMFS4833NT3G is designed to meet these criteria, and is therefore well suited for use as a switch or level shifter.</p><p>When the NTMFS4833NT3G is used as a level shifter, it acts as a bridge between two electrical systems with different voltage levels. One of the main benefits of the device is that it is capable of operating at very low voltages, which makes it ideal for devices that require a low-voltage level-shifting capability. Additionally, the NTMFS4833NT3G can provide excellent thermal performance and high output current capability.</p><p>The NTMFS4833NT3G is well suited for use in a variety of applications, including power supplies, PFC (Power Factor Correction) circuits, and low noise audio circuits. In power supplies, the device can be used to provide efficient level shifting and low-voltage operation. In PFC circuits, the NTMFS4833NT3G can provide efficient operation with its low-voltage capability. In audio circuits, the NTMFS4833NT3G can provide excellent low-noise operation.</p><p>The N-Channel Enhancement Mode MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a four-terminal device that has two simple transfers: Source and Drain. The Source is the point from which current flows and the Drain is the point where it is delivered. The current flow is modulated by the Gate-to-Source voltage, which is the controlling input for the device. The voltage applied to the Gate determines the amount of current flowing through the device. For the NTMFS4833NT3G, the control voltage must range between -20V and 20V.</p><p>The NTMFS4833NT3G is a versatile device that can be used in a variety of applications. Its low-voltage operating capability, excellent thermal performance, and high output current make it an ideal choice for level-shifting operation. Additionally, its four-terminal capability allows it to be used in power supplies, PFC circuits, and low noise audio circuits.</p>

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