Allicdata Part #: | NTMFS4847NAT1G-ND |
Manufacturer Part#: |
NTMFS4847NAT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11.5A SO-8FL |
More Detail: | N-Channel 30V 11.5A (Ta), 85A (Tc) 880mW (Ta), 48.... |
DataSheet: | NTMFS4847NAT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 880mW (Ta), 48.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2614pF @ 12V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta), 85A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMFS4847NAT1G is an n-type metal oxide semiconductor field effect transistor (MOSFET) that belongs to the family of Single Field Effect Transistors (FETs). It is designed with a 480V drain-source breakdown voltage and a relatively low resistance of only 1.47 Ohm in its drain current. With a maximum of 17A drain current, this transistor has a fairly high current rating while its output can rely on a very low input capacitance and a fast switching speed.
The NTMFS4847NAT1G can be used in some of the most advanced electrical applications, due to its high switching speed, high drain current, and low resistance to the electric current. In addition, the NTMFS4847NAT1G can be used in applications where the input signal must be in the form of a short pulse, as it can respond well to very short pulses.
The method behind the operation of the NTMFS4847NAT1G is simple and it relies heavily on the principles of field effect transistors. The construction of a field effect transistor (FET) includes three terminals: a source, drain, and gate. A voltage applied between the source and the gate will affect the conductivity between the drain and the source terminals, thus affecting the current flow in the transistor.
When the NTMFS4847NAT1G is used in an electrical circuit, the voltage applied between the source and the gate will alter the electric field in the region between the source and the drain, controlling the conductivity of the transistor and the current flow within it. In addition, the gate voltage will cause the electric voltage at the drain to slightly increase, thus improving the performance of the circuit.
There are various other applications that the NTMFS4847NAT1G can be used for, including low-noise amplifier (LNA) stages, input buffers in radio frequency (RF) circuits, power supplies, and high-frequency oscillators. Since this MOSFET is rated for a very high drain current and is very efficient in its function, it can be used for high-frequency switching circuits and power amplifiers, where electrical efficiency and performance is important.
The NTMFS4847NAT1G from ON Semiconductor is a power transistor designed to meet and exceed the demands of modern electrical and electronic applications. Due to its low resistance and high current rating, it can easily be used in both low-voltage applications and high-voltage applciations. Additionally, it is fast and efficient, allowing it to be used in applications where the input signals have to be in the form of a very short pulse.
The specific data is subject to PDF, and the above content is for reference
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