NTMFS4C58NT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	--
Technology:	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN

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<p>The NTMFS4C58NT3G is a type of Field-Effect Transistor (FET), a special type of transistor that utilizes an electric field to control the flow of current. Specifically, it is a single-gated, n-channel enhancement MOSFET. </p><p>Designed and manufactured by ON Semiconductor, NTMFS4C58NT3G is a MOSFET that has been optimized to handle a variety of power management applications, such as synchronous rectification, motor control, and LED lighting. This efficiency is achieved through superior breakdown voltage and low on-resistance, making it a great choice for routers, laptops, LCD monitors, and other consumer electronics. </p><p>NTMFS4C58NT3G is a low-capacitance MOSFET that offers low gate-source capacitance for fast switching speeds, as well as superior Avalanche ruggedness to help protect the device from electrical overstress (EOS). It also offers fast switching characteristics, making it an ideal choice for applications where maximizing power efficiency is paramount. </p><p>In order to understand how NTMFS4C58NT3G works, it is important to understand the basics of MOSFETs and FETs. MOSFETs are electronically-controlled semiconductor devices that are widely used in modern electronics. They are made up of three terminals: source, gate, and drain. When a voltage is applied to the gate, it allows electrons to flow from the source to the drain, effectively acting as a switch that carries a current. </p><p>FETs are a special type of transistor that work on a similar principle, but instead of having a gate that is connected to a voltage, the gate is connected to an electric field. The electric field produces a conductive channel between the source and the drain, allowing current to flow when the voltage is applied. When the voltage is removed, the electric field is disabled and the current no longer flows through the channel. </p><p>When an NTMFS4C58NT3G is in operation, a voltage is applied to the gate, creating an electric field between the source and the drain. This electric field controls the flow of current from the source to the drain, allowing the FET to act as a switch. This process allows for optimal power management and high efficiency in applications such as synchronous rectification, motor control, and LED lighting. </p><p>Therefore, NTMFS4C58NT3G is an excellent choice for a wide range of power management applications in consumer electronics and other devices. The efficient operation and fast switching times make it an ideal FET solution for a variety of applications.</p>

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