Allicdata Part #: | NTMFD4902NFT3G-ND |
Manufacturer Part#: |
NTMFD4902NFT3G |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3... |
DataSheet: | NTMFD4902NFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.54133 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A, 13.3A |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 15V |
Power - Max: | 1.1W, 1.16W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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The NTMFD4902NFT3G is a power MOSFET array in a extremely small footprint. This device, manufactured by Toshiba, is intended to make use of the advanced benefits of a power array, such as reduced switching losses, improved noise immunity and improved EMC performance, in a much smaller physical package. The NTMFD4902NFT3G has a wide range of applications that cover a variety of industries and systems, including power sources, power conditioning systems, power supplies, and automotive electronics.
At its heart, the NTMFD4902NFT3G is a self-driven MOSFET array which uses the MOSFET principle of operation. MOSFET stands for metal oxide semiconductor field effect transistor, and is a type of transistor which uses the movement of charge carriers in a layer of oxide to control current flow. In the NTMFD4902NFT3G, the MOSFET array consists of four independent MOSFETs, with each MOSFET having its own gate, drain, and source. The gate is used to control the voltage applied to the drain and source, and thus the current that flows between them, while the drain and source are connected to their own independent power supplies, allowing them to be switched on and off independently.
Because the NTMFD4902NFT3G is a power array, meaning that it contains multiple MOSFETs, it can offer a wide range of advantages. For instance, because each MOSFET can be independently switched on and off, the resulting output current can be tailored to suit specific applications without the need for complex circuitry. Additionally, the NTMFD4902NFT3G offers improved noise immunity and EMC performance, as the multiple MOSFETs allow for better filtering of external interference. Furthermore, because of the small footprint of the package, the NTMFD4902NFT3G is highly attractive to power electronics design engineers, who are looking to reduce their space requirements without sacrificing performance.
The NTMFD4902NFT3G is an ideal solution for various applications that require a rugged, space-efficient MOSFET array solution. It can be used in a variety of industrial, consumer, and automotive applications, such as power sources, motor control systems, and power conditioning systems, among others. The array also provides improved noise immunity and EMC performance to these applications, helping to ensure that the system operates reliably and free from unwanted interference. Additionally, its small size makes it an attractive choice for space-constrained projects.
In summary, the NTMFD4902NFT3G is a power MOSFET array designed to offer excellent performance in a small package. Its four independent MOSFETs provide excellent filtering of external interference, while its small size allows it to be used in space-limited applications. Increasingly, the NTMFD4902NFT3G is being used in a variety of industrial, consumer, and automotive applications, in order to make use of its excellent noise immunity, improved EMC performance, and small size.
The specific data is subject to PDF, and the above content is for reference
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