NTMFD4C20NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFD4C20NT1GOSTR-ND |
Manufacturer Part#: |
NTMFD4C20NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V SO8FL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 9.1A, 13.7A 1.... |
DataSheet: | NTMFD4C20NT1G Datasheet/PDF |
Quantity: | 1500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9.1A, 13.7A |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 15V |
Power - Max: | 1.09W, 1.15W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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NTMFD4C20NT1G is a power array consisting of four N-Channel Enhancement Mode Field Effect Transistors (NMOSFETs). The device is ideally suited for power management applications and high current switching applications, such as motor control, LED driver, general purpose power switches and lighting. It is designed to provide current conduction and protection in power management applications.
Applications of NTMFD4C20NT1G
The NTMFD4C20NT1G provides excellent power management and high current switching capabilities for a wide range of applications in automotive electronics, consumer electronics, industrial electronics, and power supplies. The device’s low resistance and high current capabilities make it ideal for motor control and LED driver applications. In addition, the device can be used for general purpose power switches and lighting switches. It can also be used for hydrostatic and hydraulic control, audio amplifier protection, power supply protection, and lighting control.
Working Principle of NTMFD4C20NT1G
The NTMFD4C20NT1G consists of four enhancement mode NMOSFETs in a single package. Each N-channel FET is composed of a source, drain and gate; the source and drain are connected to the external power supply, while the gate is connected to the input signal. When the input signal is high, the gate voltage is close to the source voltage, turning on the transistor. Conversely, when the input signal is low, the gate voltage is close to ground, turning off the transistor. This arrangement allows for convenient control of the power being applied to an external device or load.
The NTMFD4C20NT1G is designed to provide very high speeds, up to 250MHz, and low power dissipation, up to 25mW. The device also offers a wide range of voltage and current ratings, allowing it to be used in a variety of applications. The device has a low on-state resistance, allowing it to conduct large amounts of current and reduce power losses. Additionally, the device can be used as a power switch, providing protection and current control in power management applications.
In conclusion, the NTMFD4C20NT1G power array is an ideal solution for power management applications and high current switching applications. The device’s low resistance and high current conduction capabilities make it suitable for motor control, LED driver, general purpose power switches and lighting applications. Moreover, the device offers excellent performance with high speeds and low power dissipation, making it a great choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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