NTMFD5C650NLT1G Allicdata Electronics
Allicdata Part #:

NTMFD5C650NLT1G-ND

Manufacturer Part#:

NTMFD5C650NLT1G

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: T6 60V LL S08FL DS
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A...
DataSheet: NTMFD5C650NLT1G datasheetNTMFD5C650NLT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 1.33127
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Power - Max: 3.5W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMFD5C650NLT1G is a MOSFET array designed for high-performance power applications.

MOSFET arrays are composed of multiple transistors, typically MOSFETs.These transistors are designed for the easy and efficient control of large currents and voltages, making them ideal for use in power systems. The NTMFD5C650NLT1G has two power MOSFETs with a total of 6 p-channels and 4 n-channels. It is structurally optimized for low RDS(ON) to minimize power dissipation while operating at high efficiency, making it suitable for high-power applications.

The NTMFD5C650NLT1G’s array configuration allows it to provide high-speed switching and low power dissipation for both high and low current handling. It is designed to operate over a broad temperature range, from -55 °C to 150 °C. Its maximum breakdown voltage is 650 V and it has an 8-pin plastic surface mount package that is both durable and reliable.

The NTMFD5C650NLT1G is most commonly used in consumer electronics, such as computers, televisions, and audio systems. It can also be used in automotive electronics, power supplies, renewable energy systems, and LED lighting. Its array configuration and wide operating temperature range make it a versatile choice for power applications.

The NTMFD5C650NLT1G is a reversible dual P-channel/N-channel enhancement mode field-effect transistor. It is composed of two transistors sharing common gate physics, which allows both transistors to be controlled by one voltage. This design simplifies the design and enables fast switching speed and low on-resistance. The P-channels are designed for load switching, enabling current to flow when a positive voltage is applied to the gate terminal. The N-channels are designed for current sinking, allowing current to flow when a negative voltage is applied to the gate terminal.

Overall, the NTMFD5C650NLT1G provides an efficient, reliable, and reliable solution for power applications. Its wide operating temperature range and its 8-pin plastic surface mount package make it highly durable and adaptable. It is a great choice for consumer goods, automotive systems, and power systems.

The specific data is subject to PDF, and the above content is for reference

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