Allicdata Part #: | NTMFD5C650NLT1G-ND |
Manufacturer Part#: |
NTMFD5C650NLT1G |
Price: | $ 1.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 60V LL S08FL DS |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A... |
DataSheet: | NTMFD5C650NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.33127 |
Series: | -- |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 111A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 98µA |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2546pF @ 25V |
Power - Max: | 3.5W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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The NTMFD5C650NLT1G is a MOSFET array designed for high-performance power applications.
MOSFET arrays are composed of multiple transistors, typically MOSFETs.These transistors are designed for the easy and efficient control of large currents and voltages, making them ideal for use in power systems. The NTMFD5C650NLT1G has two power MOSFETs with a total of 6 p-channels and 4 n-channels. It is structurally optimized for low RDS(ON) to minimize power dissipation while operating at high efficiency, making it suitable for high-power applications.
The NTMFD5C650NLT1G’s array configuration allows it to provide high-speed switching and low power dissipation for both high and low current handling. It is designed to operate over a broad temperature range, from -55 °C to 150 °C. Its maximum breakdown voltage is 650 V and it has an 8-pin plastic surface mount package that is both durable and reliable.
The NTMFD5C650NLT1G is most commonly used in consumer electronics, such as computers, televisions, and audio systems. It can also be used in automotive electronics, power supplies, renewable energy systems, and LED lighting. Its array configuration and wide operating temperature range make it a versatile choice for power applications.
The NTMFD5C650NLT1G is a reversible dual P-channel/N-channel enhancement mode field-effect transistor. It is composed of two transistors sharing common gate physics, which allows both transistors to be controlled by one voltage. This design simplifies the design and enables fast switching speed and low on-resistance. The P-channels are designed for load switching, enabling current to flow when a positive voltage is applied to the gate terminal. The N-channels are designed for current sinking, allowing current to flow when a negative voltage is applied to the gate terminal.
Overall, the NTMFD5C650NLT1G provides an efficient, reliable, and reliable solution for power applications. Its wide operating temperature range and its 8-pin plastic surface mount package make it highly durable and adaptable. It is a great choice for consumer goods, automotive systems, and power systems.
The specific data is subject to PDF, and the above content is for reference
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