Allicdata Part #: | PDTB113ZQAZ-ND |
Manufacturer Part#: |
PDTB113ZQAZ |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTB113ZQAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.03360 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 325mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
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This article is aimed at understanding the applications field and working principle of the Transistors - Bipolar (BJT) - Single, Pre-Biased PDTB113ZQAZ. A Pre-Biased BJT, or "Pre-Biased BJT" is a type of transistor, which uses a pre-applied voltage before the transistor is energized. It should be noted that this allows the device to be safely operated in many applications where causing reverse voltage can be damaging. The PDTB113ZQAZ Pre-Biased BJT is a NPN type, which means that it is composed of two zener diodes and an emitter-base resistance. This type of transistor is able to protect against reverse polarities and the application of high voltages. It also prevents thermal runaway and short circuits in circuits that require stability and reliability. Therefore, the PDTB113ZQAZ Pre-Biased BJT is an essential component in many applications, such as automotive electronics, power supplies, audio power amplifiers, temperature control applications and more.In terms of its working principle, the PDTB113ZQAZ Pre-Biased BJT has a breakdown voltage point at which the current becomes significantly greater than the forward voltage. When this happens, the base-emitter leakage becomes enhanced, resulting in increased collector-emitter current (AKA "on-state"). This can be beneficial when using a standard BJT, but with the pre-biased voltage it helps to protect against fluctuation and prevent the transistor from switching off or becoming over-stressed. Furthermore, the pre-biased voltage helps to reduce the gain of the transistor. As a result, the actual operating voltage is lower than normally experienced with a standard BJT. This is an important consideration when using the transistor in audio power amplifiers, as it can help prevent too much noise from the transistor. The PDTB113ZQAZ Pre-Biased BJT has a wide range of applications. It is particularly useful in automotive electronics, where it is used to protect against reverse polarity and potential overvoltage situations. Its ability to prevent thermal runaway and short circuits makes it a vital part of many car safety systems. In terms of power supplies and audio power amplifiers, it can be used to reduce gain and operate at a lower voltage. It is also useful in temperature control applications, as it can provide further protection against temperature-related damage. This can be very useful in environments where precise temperatures are required, such as labs and kitchens.Overall, the PDTB113ZQAZ Pre-Biased BJT is a very reliable and versatile type of transistor, which can be successfully used in many electronic applications. Thanks to its pre-biased voltage, it is able to reduce the amount of voltage needed to operate and offer a range of other protection features.
The specific data is subject to PDF, and the above content is for reference
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