PDTB143ETR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	140MHz
Power - Max:	320mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)

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Introduction

PDTB143ETR is an enhancement type, single, pre-biased transistor that incorporates advanced bipolar technology and various well-known manufacturing processes. It is designed to provide high current power amplifier capability at high frequency switching and low distortion applications. It is also suitable for biasing and pre-regulator applications. This article will discuss the applications field and working principle of PDTB143ETR.

Applications Field

PDTB143ETR is an excellent choice for wide range of applications. It has a wide frequency response from 50MHz to 6GHz. It is suitable for high power amplifier applications and power converter applications. It is also suitable for biasing, pre-regulator and pre-driver circuits, as well as voltage regulator applications. The PDTB143ETR transistor features a double diffused NPN junction, which gives it high current driving capability. It also has a low operating temperature and it can be used in high temperature applications. Its low on-resistance allows lower power consumption and greater efficiency in applications.

Working Principle

The working principle of PDTB143ETR is based on the typical bipolar NPN device structure. The PDTB143ETR features a P-type emitter layer, a N-type base layer, and an N-type collector layer. The base layer is connected to the emitter layer, forming an NPN transistor. In the PDTB143ETR transistor, the current flows from the base to the collector, and the collector can then be used to drive the load, such as an amplifier or a power converter. The base terminal is pre-biased in the circuit, which means that the current can start flowing without the need for a voltage, and the transistor can then be turned ‘on’ and ‘off’ by controlling the base current. This pre-biased structure means that PDTB143ETR has a high input impedance and low output impedance, allowing it to drive the load more efficiently. The PDTB143ETR transistor also features low power consumption, high efficiency, and high switching frequency. These features make it suitable for high-power applications, such as power converters and power amplifiers.

Conclusion

In conclusion, the PDTB143ETR is an advanced, single pre-biased transistor that is suitable for a wide range of applications. It has a wide frequency response, low operating temperature, and high current driving capability. It is suitable for biasing and pre-regulator applications, as well as voltage regulator applications. The pre-biased structure means that it has a high input impedance and low output impedance, allowing it to drive the load more efficiently. PDTB143ETR also has low power consumption, high efficiency, and high switching frequency. These features make it suitable for high-power applications, such as power converters and power amplifiers.

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