PDTB143XQAZ

Transistors - Bipolar (BJT) - Single, Pre-Biased

PDTB143XQAZ is a single, pre-biased, NPN transistor for general purpose applications. Pre-biased transistors are often chosen for applications requiring high current gain, high speed switching, and wide temperature range operation.

Application Fields

The PDTB143XQAZ pre-biased NPN transistor is suited for a broad range of applications such as switching, small signal amplifiers, oscilators, logic buffers, data acquisition, and medical imaging. Thanks to its high current gain, high speed switching, and wide temperature range operation, it is well suited for general purpose applications such as RF amplifiers, power supplies, and power amplifiers.

Working Principle

The PDTB143XQAZ is a NPN Bipolar Junction Transistor (BJT). It has three terminals, the collector, base and emitter. In a NPN BJT, electrons flow from the emitter to the base where they are collected into the collector. With an NPN BJT, a small base current controls a much larger collector-emitter current.

To reduce the effects of temperature on the base of the transistor, it is pre-biased. A pre-biased transistor’s base is partially biased in order to shift the Vbe temperature coefficient in a positive direction. This reduces the affects of temperature on the current gain of the transistor.

The PDTB143XQAZ also offers advantages over other BJTs such as a lower saturation voltage, and faster switching times. This makes it well-suited for demanding applications such as stereo amplifiers and automotive grade electronics.

Conclusion

The PDTB143XQAZ is a single, pre-biased NPN transistor for a broad range of general purpose applications from RF amplifiers to power amplifiers. Its advantages include a high current gain, wide temperature range operation, and faster switching times for a wide range of applications requiring an efficient and reliable transistor.