PDTB123EQAZ Allicdata Electronics
Allicdata Part #:

PDTB123EQAZ-ND

Manufacturer Part#:

PDTB123EQAZ

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTB123EQAZ datasheetPDTB123EQAZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.03360
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 325mW
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Description

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The PDTB123EQAZ application field and working principle involves transistors, more specifically, single, pre-biased, bipolar junction transistors (BJTs). Transistors are devices that are used in almost all modern electronics to switch, amplify, and regulate current flow. As such, they have become essential components of virtually any integrated circuit.

BJTs are the oldest and most commonly employed type of transistor, and are made up of two p-type and one n-type semiconductor materials, hence the “bipolar” denomination. These materials form two junctions, base-emitter (BE) and base-collector (BC).

The PDTB123EQAZ application field employs single BJTs with a pre-biased base-emitter junction. This means that the BE junction has been permanently biased in a certain direction by an external voltage source, and consequently no current flows through the base-emitter junction, meaning the PDTB123EQAZ is essentially a “switched-off” BJT.

The PDTB123EQAZ is most commonly used as a switch, used to control the flow of current around a circuit. When a voltage is applied to the base of the PDTB123EQAZ, the base-emitter junction becomes forward biased, allowing current to flow through the transistor and switch on. Once turned on, the PDTB123EQAZ can then be used as an amplifier or a regulator in the circuit.

The main advantage of the PDTB123EQAZ compared to other types of transistors is the ease and speed with which it can be switched on and off. In addition, the PDTB123EQAZ does not require a large amount of current to be driven into its base, meaning it can be used in low power, low voltage applications.

The PDTB123EQAZ is also useful in bridge circuits, where it allows swapping between two power sources without risking a short circuit. This makes it very useful for switching circuits in vehicles, particularly in modern engines with start-stop capability.

Thanks to its low power requirements and high switching speed, the PDTB123EQAZ is also one of the most popular transistors used in consumer electronics, particularly in mobile phones and other handheld devices. The PDTB123EQAZ is even used in laptop computers, where it is responsible for switching between the laptop’s main power and battery power.

The PDTB123EQAZ is also used in consumer appliances, such as TVs and washing machines, as well as in industrial systems. Its wide range of uses makes it one of the most popular and versatile transistors on the market today.

In summary, the PDTB123EQAZ application field and working principle deal with a type of single, pre-biased, bipolar junction transistor (BJT). The PDTB123EQAZ is most commonly used as a switch, and can be used to control current flow in various applications ranging from consumer electronics to industrial systems. It is also used in bridge circuits, and is popular due to its low power requirements and high switching speed.

The specific data is subject to PDF, and the above content is for reference

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