PDTB114EQAZ Allicdata Electronics
Allicdata Part #:

PDTB114EQAZ-ND

Manufacturer Part#:

PDTB114EQAZ

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTB114EQAZ datasheetPDTB114EQAZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.03360
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 325mW
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Description

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PDTB114EQAZ is a type of single, pre-biased transistor. It belongs to the family of bipolar transistors, also known as BJTs, and is used for various applications.

A bipolar transistor is a three-terminal semiconductor device that functions by controlling the voltage, current and resistance between two distinct terminals. It is composed of two p-n junctions, a base and a collector, with the third terminal referred to as an emitter. In the case of PDTB114EQAZ transistors, the base-emitter junction is pre-biased, or biased before the device is operational. This provides a lower turn-on voltage, helping to reduce amplification delay.

One of the primary uses of PDTB114EQAZ transistors is as an amplifier. The pre-biased junction allows for a more efficient amplification of high frequency signals, with reduced distortion. The high frequency performance of the device is aided by its low input capacitance and low leakage current properties.

PDTB114EQAZ transistors are also used as switches. The bipolar junction capacitor acts as a closed switch when the biasing voltage is set above the turn-on voltage. The switch can be closed and opened quickly, allowing for applications such as pulse generation and pulse length control.

The PDTB114EQAZ transistors are also used in applications such as power supply regulation, voltage regulation, and power management. The low input capacitance of the device makes it ideal for use in designs which require a long-term stable output voltage, such as in power converters and power supplies.

PDTB114EQAZ transistors can also be applied in the field of audio power amplification. As the device is capable of achieving a high output current gain and having a low input current, it can provide a high acoustic power, while also providing a smooth response and low distortion.

The working principle behind the PDTB114EQAZ transistor is simple. The tri-terminal device is connected to a DC power source, with the base–emitter junction pre-biased. When an input voltage is applied to the base, a current passes through the transistor, allowing for the controlled conduction between the collector and the emitter. The current gain, or ratio between the output and the input current is determined by the biasing voltage.

In conclusion, PDTB114EQAZ transistors are commonly used in applications requiring high frequency performance, audio power amplification, power regulation, and switching. The working principle behind the device is simple and involves controlling the current through the device by pre-biasing the base–emitter junction. The pre-biasing reduces the turn-on voltage, allowing for a more efficient amplification of high frequency signals, with reduced distortion.

The specific data is subject to PDF, and the above content is for reference

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