Allicdata Part #: | PDTB123ES,126-ND |
Manufacturer Part#: |
PDTB123ES,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS PNP 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTB123ES,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTB123 |
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Bipolar Junction Transistors (BJT) are semiconductor devices that are commonly used in a wide range of applications. A BJT is composed of three layers: a base, a collector, and an emitter. The current flow direction through a BJT is usually from the base to the emitter, but can also reverse directions. BJTs can be further divided into three types: single BJTs, pre-biased BJTs, and double BJTs. A single BJT consists of a single layer containing one P-N junction. Such transistors can be used as amplifiers, switches, or oscillators in a variety of different circuits and devices. Pre-biased BJTs, on the other hand, are composed of two separate layers containing two P-N junctions. The layer closest to the collector is pre-biased, allowing for controlled flow of current. This type of transistor is commonly used for switch and amplifier control in small-signal circuits. Lastly, double BJTs contain two layers of two P-N junctions. This type of BJT typically find use in high-power amplifiers and in power control systems.PDTB123ES and PDTB126 are types of pre-biased BJTs, meaning they have two layers of two P-N junctions. These transistors are typically used in switch and amplifier control applications, such as controlling motors, temperature controllers, and power supplies. The main difference between PDTB123ES and PDTB126 is that the former has an on state current of 2A while the latter has an on state current of 10A. In addition, they have different output switching times with the PDTB123ES having a faster switching time than the PDTB126.The working principle of a BJT is relatively simple. When a small current flows from the base to the emitter, the resulting larger current flows from the collector to the emitter. The small base current is amplified by the transistor, allowing for more control of the output current. This enables BJTs to act as switches, amplifiers, and oscillators in various components and circuits.In terms of safety, transistors cannot be relied upon as one and only source of power. Transistors are not intended to be used to carry large loads as they can easily be damaged by sudden changes in voltage. It is important that the power supply meets the specifications set forth by the manufacturer in order to ensure proper operation and protection of the transistor.In conclusion, the PDTB123ES and PDTB126 are pre-biased BJTs which offer control and switching applications for a variety of signal and power circuits. They have two P-N junctions and are capable of being used as amplifiers, switches, and oscillators. BJTs operate on the principle of a small current being amplified by the transistor, providing a greater level of control over the output current. However, transistors should not be used as the sole source of power, as they can be easily damaged when exposed to sudden changes in voltage.
The specific data is subject to PDF, and the above content is for reference
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